Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6"Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the delivery time and come back to...
Q: We would like to ask for below. (001) +/- 0.5o Orientation Semi Insulating, C doped Resistivity ≤ 1 – 10 x 108 Ohm-cm3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No Laser Markings Individual spider style wafer...
Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm A:Yes, we could supply based on...
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below 450W/mK, which are lower the theory...
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range? A: We can offer misorientation in low degree, no problem.
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don't know if it is right.
Q:We want to know the refractive index of these SiC wafers? A:The refractive index is no=2.707, ne=2.755
