GaPのウェーハ

GaPのウェーハ

PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
  • 説明

製品の説明

PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single gallium phosphide crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide wafer has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR). Gallium phosphide single crystal is the main substrate material for the preparation of red, green, yellow and orange visible light LEDs.

GaPのウェーハと基板の仕様
Conducionタイプ N型
ドーパント Sドープ
ウェーハの大口径 50.8 +/- 0.5ミリメートル
結晶方位 (111)±0.5°
オリエンテーションフラット 111
フラット長 17.5 +/- 2ミリメートル
キャリア濃度 (2-7)×10 ^ 7 / cm 3で
RTでの抵抗 0.05-0.4ohm.cm
モビリティ 100cm²/ V.sec
エッチピット密度 3 * 10 ^ 5 / cm2の
レーザーマーキング 要求に応じて
Suface Fnish P / E
厚さ 250 +/- 20umの
エピレディー はい
パッケージ シングルウエハ容器やカセット
 
In order to reduce GaP wafer defects, the solute synthesis diffusion method can be used for crystal growth, but the growth rate is slow and it is difficult to obtain large crystals. Currently, epitaxially grown films are mostly used in gallium phosphide device fabrication.

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