GaSbのウェハー

製品の説明

PAM-XIAMEN offers Compound Semiconductor GaSb wafer – ガリウムアンチモン grown by LEC(Liquid Encapsulated Czochralski), which can reduce the defects of gallium antimonide. The GaSb wafer is epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb wafers can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

Here is the detail specification of wafer:

Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/low doped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility（cm2/V ·s):600~700
Growth Method:CZ
Polish:SSP

2）2」（50.8ミリメートル）のGaSbウェハ
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/low doped;P/Te
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500
Growth Method:LEC
Polish:SSP

3）2」（50.8ミリメートル）のGaSbウェハ
Orientation:(111)A±0.5°
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

4）2」（50.8ミリメートル）のGaSbウェハ
Orientation:(111)B±0.5°
Thickness(μm):500±25;450±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

5）2」（50.8ミリメートル）のGaSbウェハ
Orientation:(111)B 2deg.off
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility（cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

相対製品：
InAsのウェハ
InSbのウェハ
InP基板
GaAs基板
GaSbのウェハ
GaPのウェーハ

ガリウムアンチモン（GaSbでは）のような切断、エッチング又は研磨仕上げを有するウェーハとして供給され、キャリア濃度、直径と厚さの広い範囲で利用可能であることができます。

GaSb material presents interesting gallium antimonide properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the gallium antimonide crystals, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk gallium antimonide crystal growth, the gallium antimonide wafer preparation, and the gallium antimonide wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process, we report some material specificity.

We also offer gallium antimonide wafer epi service, take below as an example:

2”size GaSb epi wafer:
Epi layer: Thikness 0.5 um, undoped/p type GaSb epi layer (undoped InP epi layer also available),
Substrate:2” semi-insulating GaAs

 

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

More epiwafer information, please read:

GaSb Thin Film on GaAs