InAsのウェハ
PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.
- 説明
製品の説明
PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)(100) or (110). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.
Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C and lattice constant of 0.6058nm, and the indidum arsenide crystal structure is a zinc blende structure. Indium arsenide wafer is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Because of the superior indium arsenide properties, indium arsenide thin films are also used for making of diode lasers.
Indium arsenide band gap is a direct transition, which is similar to gallium arsenide, and the forbidden band width is (300K)0.45eV. Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide, it forms indium gallium arsenide – a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitridewith gallium nitride to yield indium gallium nitride.
ここでは詳細な仕様は次のとおりです。
2 "（50.8ミリメートル）のInAsウェーハ仕様
3 "（76.2ミリメートル）のInAsウェーハの仕様
4」（100ミリメートル）のInAsウェーハ仕様
2″ InAs Wafer Specification
| Item | Specifications | |||
| Dopant | Undoped | Stannum | Sulphur | Zinc |
| Conduction Type | N-type | N-type | N-type | P-type |
| Wafer Diameter | 2″ | |||
| Wafer Orientation | (111)±0.5° , (110)±0.5° | |||
| Wafer Thickness | 500±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | 5×1016cm-3 | (5-20)x1017cm-3 | (1-10)x1017cm-3 | (1-10)x1017cm-3 |
| Mobility | ≥2×104cm2/V.s | 7000-20000cm2/V.s | 6000-20000cm2/V.s | 100-400cm2/V.s |
| EPD | <5×104cm-2 | <5×104cm-2 | <3×104cm-2 | <3×104cm-2 |
| TTV | <10um | |||
| BOW | <10um | |||
| WARP | <12um | |||
| Laser marking | upon request | |||
| Suface finish | P/E, P/P | |||
| Epi ready | yes | |||
| Package | Single wafer container or cassette | |||
3″ InAs Wafer Specification
| Item | Specifications | |||
| Dopant | Undoped | Stannum | Sulphur | Zinc |
| Conduction Type | N-type | N-type | N-type | P-type |
| Wafer Diameter | 3″ | |||
| Wafer Orientation | (111)±0.5° , (110)±0.5° | |||
| Wafer Thickness | 600±25um | |||
| Primary Flat Length | 22±2mm | |||
| Secondary Flat Length | 11±1mm | |||
| Carrier Concentration | 5×1016cm-3 | (5-20)x1017cm-3 | (1-10)x1017cm-3 | (1-10)x1017cm-3 |
| Mobility | ≥2×104cm2/V.s | 7000-20000cm2/V.s | 6000-20000cm2/V.s | 100-400cm2/V.s |
| EPD | <5×104cm-2 | <5×104cm-2 | <3×104cm-2 | <3×104cm-2 |
| TTV | <12um | |||
| BOW | <12um | |||
| WARP | <15um | |||
| Laser marking | upon request | |||
| Suface finish | P/E, P/P | |||
| Epi ready | yes | |||
| Package | Single wafer container or cassette | |||
4″ InAs Wafer Specification
| Item | Specifications | |||
| Dopant | Undoped | Stannum | Sulphur | Zinc |
| Conduction Type | N-type | N-type | N-type | P-type |
| Wafer Diameter | 4″ | |||
| Wafer Orientation | (111)±0.5° , (110)±0.5° | |||
| Wafer Thickness | 900±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | 5×1016cm-3 | (5-20)x1017cm-3 | (1-10)x1017cm-3 | (1-10)x1017cm-3 |
| Mobility | ≥2×104cm2/V.s | 7000-20000cm2/V.s | 6000-20000cm2/V.s | 100-400cm2/V.s |
| EPD | <5×104cm-2 | <5×104cm-2 | <3×104cm-2 | <3×104cm-2 |
| TTV | <15um | |||
| BOW | <15um | |||
| WARP | <20um | |||
| Laser marking | upon request | |||
| Suface finish | P/E, P/P | |||
| Epi ready | yes | |||
| Package | Single wafer container or cassette | |||
Stitched Flatness Map of InAs Wafer
Wafer Spec(example):
1）2” （50.8ミリメートル）のInAs
Type/Dopant:N/S
Orientation：[111B]±0.5°
Thickness：500±25um
Epi-Ready
SSP
2）2” （50.8ミリメートル）のInAs
Type/Dopant:N/Undoped
Orientation : (111)B
Thickness：500um±25um
SSP
3）2” （50.8ミリメートル）のInAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness：500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD（cm -2 ）:<15000
SSP
4）2” （50.8ミリメートル）のInAs
Type/Dopant:N/Undoped
Orientation : <100> with [001]O.F.
Thickness：2mm
AS cut
5）2” （50.8ミリメートル）のInAs
Type/Dopant:N/P
Orientation ：(100),
Carrier Concentration(cm-3)：(5-10)E17,
Thickness：500 um
SSP
6)Indium Arsenide wafers,
2″Ø×500±25µm,
p-type InAs:Zn
(110)±0.5°,
Nc=(1-3)E18/cc ,
Both-sides-polished,
Sealed under nitrogen in single wafer cassette.
すべてのウェーハは、高品質のエピタキシー準備仕上げで提供されています。 表面は、Surfscan（登録商標）ヘイズ及び粒子監視、分光エリプソメトリと斜入射干渉計を含む、社内、高度な光学計測技術によって特徴付けられます
ウェハのInAs、n型（1 0 0）における表面電子蓄積層の光学的性質にアニーリング温度の影響は、ラマン分光法によって研究されてきました。 それにより、非選別LOフォノンによる散乱のラマンピークはInAsの表面に電子蓄積層をアニールによって除去されていることを示す温度上昇と共に消失することを示します。 関与するメカニズムは、X線光電子分光法、X線回折および高分解能透過型電子顕微鏡により分析しました。 結果は、非晶質のIn 2 O 3及びAs 2 O 3相が焼鈍時のInAs表面に形成されていることを示しており、一方、酸化層とウエハとの間の界面における層のような薄い結晶は、表面電子の蓄積の厚さの減少につながるが生成されます吸着原子がアクセプタ型の表面状態を導入したよう以来の層。
The emission wavelength of InAs is 3.34μm, and lattice-matched In-GaAsSb, InAsPSb and InAsSb multi-epitaxial materials can be grown on the indium arsenide substrates, which can manufacture lasers and detectors for optical fiber communication in the 2～4μm band.
We also offer InAs wafer epi service, take below as an example:
2”size InAs epi wafer(PAM190730-INAS):
Epi layer: Thikness 0.5 um, InAs epi layer(undoped, n type),
Substrate:2” semi-insulating GaAs
相対製品：
InAsのウェハ
InSbのウェハ
InP基板
GaAs基板
GaSbのウェハ
GaPのウェーハ
Indium Arsenide Ingot with Zinc Blende Structure Grown By VGF
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