InSbのウェハ

電気・ドーピング仕様
伝導型	n型	n型	n型	n型	p型
ドーパント	低ドープ	テルル	低テルル	ハイテルル	Genmanium
EPD cm-2	2″3″4″≤50				2″≤100
Mobility cm² V-1s-1	≥4*105	≥2.5*104	≥2.5*105	指定されていない	8000-4000
Carrier Concentration cm-3	5*1013-3*1014	（1-7）*1017	4*1014-2*1015	≥1*1018	5*1014-3*1015

 

 

1)2″(50.8mm)InSb Wafer
Orientation：(100)
タイプ/ドーパント:N/低ドープ
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP

2)2″(50.8mm)InSb Wafer
Orientation：(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP

3)2″(50.8mm)InSb Substrate
Orientation：(111) + 0.5°
Thickness:450+/- 50 um
タイプ/ドーパント:N/低ドープ
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

4)2″(50.8mm)InSb Substrate
Orientation：(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP

5)2″(50.8mm)Indium Antimonide Wafer
Thickness:525±25µm,
Orientation：[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=（4-8）E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

6）2」（50.8ミリメートル）のGaSb
Thickness:525±25µm,
Orientation：[111B]±0.5°,
Type/Dopant:P/low doped;N/low doped
Polish:SSP;DSP

表面状態およびその他の仕様
Indium Antimonide wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The InSb wafer could be high quality epi-ready finishing.

オリエンテーション仕様

Indium antimonide surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Indium antimonide substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available InSb wafer orientation could be (100),(111), (110) or other orientation or mis degree.

梱包状態

Polished wafer: individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required.
As-cut Wafer: Cassette shipment. (Glassine bag available on request).

Indium Antimonide Properties and Uses

The indium antimonide crystal structure is silver, brittle, and zinc blende structure. The indium antimonide lattice constant is 6.48 Å, and indium antimonide is a direct bandgap material with a narrow band gap of 0.18 eV. The indium antimonide conduction electron mobility is as high as 7800 cm2/V·s , which can be used to make infrared detectors, photomagnetic detectors and Hall devices.

相対製品：
InAsのウェハ
InSbのウェハ
InP基板
GaAs基板
GaSbのウェハ
GaPのウェーハ

InSb Epi Wafer

Differential Magnetoresistive Sensor

InSb Magnetoresistance (MR) Sensor

InSb Detector 

Uncooled Infrared Detector