化合物半導体

PAM-XIAMENは、SiCウェーハおよびIII-V族ウェーハ（InSbウェーハ、InPウェーハ、InAsウェーハ、GaSbウェーハ、GaPウェーハ、GaNウェーハ、AlNウェーハ、GaAsウェーハ）を含む化合物半導体ウェーハ材料を提供しています。
III-V compounds material include BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb. Among them, BN, AlN, GaN and InN are Wurtzite structures, and the other 12 are zinc blende structures. Because pentavalent atoms have higher electronegativity than trivalent atoms, there are a few ionic bond components. Because of this, when the III-V materials are placed in the electric field, the lattice is easy to be polarized, and the ion displacement is helpful to increase the dielectric coefficient, if the electric field frequency is in the infrared range. Among the n-type semiconductors of GaAs materials, the electron mobility (mn-8500) is much higher than that of Si (mn-1450), so the movement speed is fast, and its application in high-speed digital integrated circuits is superior to that of Si semiconductors.