Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source
March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated [...]
2012-03-06メタ著者
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15メタ著者
1470 / 1550nm High Power Laser Single Chip
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
Option1:1.5w:
Item
Parameters
wavelength
1470/1550nm
power
1.5 W
Working current
4 A
Working voltage
1.4 V
Strip width
96 μm
size
1000*500*150 μm
Divergence angle
11/31 degrees
Photoelectric conversion efficiency
26%
Option2: 3w:
Item
Parameters
wavelength
1470/1550nm
power
3 W
Working current
9A
Working voltage
1.5V
Strip width
96 μm
size
2000*500*150 μm
Divergence angle
11/28 degrees
Photoelectric conversion [...]
2020-06-17メタ著者
PAM XIAMEN offers high-quality BaF2 crystal substrate.
BaF2 is an excellent Infrared crystal and Scintillating crystal. PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications.
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Cubic
6.196
1354 oC
4.88
3 (mohs)
18.1×10-6 / oC)
ho 1.47443
BaF2, (100), 10x10x 0.5 mm, 2 sides polished
BaF2, (100), 10x10x 1.0 mm, [...]
2019-04-16メタ著者
The silicon carbide applications are covering a wide range, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current.
1. An Indispensable Inverter Fabricated on Silicon Carbide Substrate for [...]
2021-04-12メタ著者
PAM-XIAMEN can offer InAlN HEMT( Indium Aluminium Nitride High Electron Mobility Transistor) structure on 8-inch silicon. InAlN band gap is a direct band gap, and InAlN HEMT is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride [...]
2021-04-16メタ著者