PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure:
Transmission Rate of 4H Semi-insulating SiC Wafer
We also [...]
2018-08-07メタ著者
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
381
P/E
0.085-0.115
SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
p-type Si:B
[110] ±0.3°
3″
381
P/E
0.0448-0.0672
SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
p-type Si:B
[110] [...]
2019-03-06メタ著者
PAM-XIAMEN offers (20-2-1) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-2-1)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-09-02メタ著者
There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN.
1. What Is Intrinsic Semiconductor?
Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
2022-06-20メタ著者
PAM XIAMEN offers Nickel Substrate & Foil (Single crystal and Polycrystalline ).
Ni Single crystal
Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished
Ni Single Crystal Substrate, <100>, 10×10 x 0.5 mm, 1 side polished
Ni Single Crystal [...]
2019-05-08メタ著者
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
P
Boron
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
P
Boron
FZ
-100
>3000
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/WTOx
76.2
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
76.2
P
Boron
CZ
-100
1-10
825-875
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
850-1000
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
76.2
P
Boron
CZ
-111
1-20
300-350
P/P
PRIME
76.2
P
Boron
CZ
-111
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
>100
275-325
P/P
PRIME
76.2
P
Boron
CZ
-110
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
100-200
800-850
P/P
PRIME
76.2
Any
Any
CZ
Any
Any
250-500
P/E
TEST
76.2
Any
Any
CZ
-100
1-100
330-430
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-100
> 15000
350-400
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-111
> 15000
350-400
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-04メタ著者