Silicon Wafer
Si wafer Substrate -Silicon
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
N/A
N/A
N/A
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
(1-200)E16
N/A
N/A
1-100
Si
(100)
25.4
525
N/A
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si with Oxide layer
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
350-500
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
Si
(100)
50.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si with electrodes
(100)
50.8
400
N/A
<0.05
N/p
1E14-1E15
N/A
N/A
1-100
Si
(100)
50.8
275
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
275±25
SSP
1~10
N/p
N/A
N/A
N/A
1-100
Si
(111)
50.8
350±15
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
430±15
SSP
5000-8000
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
410±15
SSP
1~20
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
400-500
SSP
>5000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
525±25
SSP
1~50
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
SSP
1~10
N P
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
P/P
>700
P/
N/A
N/A
N/A
1-100
Si
(100)
76.2
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si
(100)
100
625
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
SSP
N/A
N/P
N/A
N/A
N/A
1-100
Si
(100)
100
320
SSP
>2500ohm·cm
P/b
N/A
N/A
N/A
1-100
Si
(100)
100
N/A
SSP
10~30
N/p
N/A
N/A
N/A
1-100
Si
(100)
100
505±25
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
381
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
625±25
SSP
0.001-0.004
N/A
N/A
N/A
N/A
1-100
Si [...]
Other Wafers
ZnO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
ZnO
(0001)
10×10
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(10-10)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
N/A
14X14
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
15X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
As cut
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
2000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5×5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(11-20)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
As a ZnO semiconductor wafer supplier, we offer ZnO semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
MgO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
MgO
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
YSZ Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(111)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
20×20
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
30×30
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a YSZ wafer supplier,we offer YSZ wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
STO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
STO
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
LSAT Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
LSAT
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
2000
SSP
N/A
N/A
N/A
N/A
<0.5
As a LSAT wafer supplier,we offer LSAT wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
TiO2 Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime [...]
当社は世界有数のガラスウェーハサプライヤーの 1 つであり、MEMS、光ファイバー AWG、LCD 用に、ボロフロート、溶融シリカおよび石英、BK7、ソーダライムなどのさまざまな材料で作られた薄型および超薄型ガラスウェーハおよび基板を提供しています。パネルとOLED [...]
2018-07-11メタ著者
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb
InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team
3)2”InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness:500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD(cm -2 ):<15000
SSP
5)2”InAs
Type/Dopant:N/P
Orientation :(100),
Carrier Concentration(cm-3):(5-10)E17,
Thickness:500 [...]
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP
GaSb Wafer Substrate – Gallium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
GaSb
(100)±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)A±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Te
(5-8)E17
N/A
N/A
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
P/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/Te
(1-8)E17/(2-7)E16
N/A
< 1000
1-100
GaSb
(100)
50.8
450±25
SSP
N/A
N/A
(1-1.2)E17
N/A
N/A
1-100
GaSb
(100)
50.8
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaSb
(100)
76.8
500-600
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)
100
800±25
DSP
N/A
P/Zn
N/A
N/A
N/A
1-100
GaSb
(100)
100
250±25
N/A
N/A
P/ZnO
N/A
N/A
N/A
As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth [...]
Compound Semiconductor Wafer Including Gaas Wafer,Germanium Wafer, InP Wafer,InSb Wafer
In Stock, But Not Limited To The Following.
Wafer No.
Wafer Size
Polished
Type
Wafer Thickness
Quantity(pcs)
Dislocation Density
Resistivity(ohm.cm)
PAM-XIAMEN-WAFER-#III-V1
1″
SSP
N100
450±25
9
EPD<700
0.00204-0.00427
PAM-XIAMEN-WAFER-#III-V2
10*11 cell
average efficiency 32.72%
—
—
56
—
—
PAM-XIAMEN-WAFER-#III-V3
2″
SSP
Semi-insulating
350um
10
EPD<700
—
PAM-XIAMEN-WAFER-#III-V4
2″
DSP
Semi-insulating
350±20
2
EPD<900
—
PAM-XIAMEN-WAFER-#III-V5
2″
DSP
Semi-insulating
350±20
2
EPD<600
—
PAM-XIAMEN-WAFER-#III-V6
2″
SSP
N type 15°
350um
1
EPD<5000
—
PAM-XIAMEN-WAFER-#III-V7
2″
SSP
N type 15°
350um
35
EPD500-1000
—
PAM-XIAMEN-WAFER-#III-V8
2″
DSP
N type 2°
350um
5
<50
—
PAM-XIAMEN-WAFER-#III-V9
2″
SSP
N type 2°
350um
2
EPD1735-2198
—
PAM-XIAMEN-WAFER-#III-V10
2″
SSP
N type 2°
350um
25
EPD1569-2061
—
PAM-XIAMEN-WAFER-#III-V11
2″
SSP
N type 2°
450um
3
—
PAM-XIAMEN-WAFER-#III-V12
2″
DSP
N type
400±15
14
EPD<50
—
PAM-XIAMEN-WAFER-#III-V13
2″
DSP
N type
625±15
4
epd1300-1400
—
PAM-XIAMEN-WAFER-#III-V14
2″
DSP
N type
625±15
34
EPD50-100
—
PAM-XIAMEN-WAFER-#III-V15
2″
DSP
N type 100
110um
15
JGS2001002,G202001X
—
PAM-XIAMEN-WAFER-#III-V16
2″
SSP
PNP/N Epi wafer
—
4
—
—
PAM-XIAMEN-WAFER-#III-V17
2″GaP
SSP
—
250±20
1
—
—
PAM-XIAMEN-WAFER-#III-V18
3″
SSP
Semi-insulating
600um/625um
1
—
—
PAM-XIAMEN-WAFER-#III-V19
3″
DSP
Semi-insulating
586um
1
—
—
PAM-XIAMEN-WAFER-#III-V20
3″
DSP
Semi-insulating
600um/501um
1
—
—
PAM-XIAMEN-WAFER-#III-V21
3″
SSP/DSP
Semi-insulating
625um
25
—
—
PAM-XIAMEN-WAFER-#III-V22
3″
DSP
625±20
20
—
—
PAM-XIAMEN-WAFER-#III-V23
3″
DSP
Semi-insulating
3500±20
2
—
—
PAM-XIAMEN-WAFER-#III-V24
3″
DSP
Semi-insulating
625um
35
—
—
PAM-XIAMEN-WAFER-#III-V25
3″
SSP/DSP
N type [...]
2019-11-27メタ著者