PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2.
Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
2018-09-06meta-author
Q: What wafer size do you provide with flat sapphire substrate?
A:Currently we still can offer 2″ wafer on flat sapphire substrate.
2018-06-19meta-author
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?
A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
2018-06-19meta-author
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs?
A:Yes, we can offer 850nm or 620nm for 4” size.
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves?
A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
2018-06-19meta-author
Q:Do these 2” PSS LED wafers have the same epi-stack as the 4” PSS? If not, please send me the diagram with thicknesses. Wavelength can be same: central 455nm
A: the 2″ detail layer thickness and structure is same as 4″, no any difference. Wavelength:455nm+/-5nm [...]
2018-06-19meta-author