レーザーダイオード用エピウエハ
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
- 説明
製品の説明
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:
| 基板材料 | 材料機能 | 波長 | アプリケーション |
| GaAsの | GaAs / GalnP / AlGaInP系/ GaInPから | 波長635nm | |
| エピウエハGaAs系 | 650nmの | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs / GalnP / AlGaInP系/ GaInPから | 660nmの | ||
| GaAs / AlGaAs系/ GalnP / AlGaAs系/ GaAsの | 703nm | ||
| GaAs / GalnP / AlGaInP系/ GaInPから | 780nmの | ||
| GaAs / GalnP / AlGaInP系/ GaInPから | 785nm | ||
| エピウエハGaAs系 | 800-1064nm | 赤外線LD | |
| GaAs / GalnP / AlGaInP系/ GaInPから | 808nmの | 赤外線LD | |
| エピウエハGaAs系 | 波長850nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| エピウエハGaAs系 | <870nm | 光検出器 | |
| エピウエハGaAs系 | 850-1100nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs / AlGaAs系/ GaInAsの/ AlGaAs系/ GaAsの | 905nm | ||
| GaAs / AlGaAs系/たInGaAs / AlGaAs系/ GaAsの | 950nm | ||
| エピウエハGaAs系 | 980nmの | 赤外線LD | |
| InPベースのエピウエハ | 1250-1600nm | 雪崩光検出器 | |
| エピウエハGaAs系 | 1250-1600nm/>2.0um (InGaAs absorptive layer) |
光検出器 | |
| エピウエハGaAs系 | 1250-1600nm/<1.4μm (InGaAsP absorptive layer) |
光検出器 | |
| InPベースのエピウエハ | 1270-1630nm | DFBレーザ | |
| たGaAsP / GaAs系/ GaAs基板 | 1300nmの | ||
| InPベースのエピウエハ | 1310nmの | FPレーザー | |
| たGaAsP / GaAs系/ GaAs基板 | 1550 | FPレーザー | |
| 1654nm | |||
| InPベースのエピウエハ | 1900nm | FPレーザー | |
| 2004nm |
About LD Epitaxy Wafer Applications & Market
The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.
The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.
Please see below detail specification of LD epitaxy wafer:
808nm laser diode epi wafers-2
GaAs Epitaxy with Thick Growth
GaAs based Epi Structure MOCVD Grown for Light Emitter
Narrow InGaAsP Quantum Well Grown on InP Wafer
InAs Quantum Dot Layers on InP Substrate
シングルエミッタチップ
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
LDベアバー