GaN系LED用のエピタキシャルウエハ

GaN系LED用のエピタキシャルウエハ

PAM-XIAMEN者のGaN(窒化ガリウム)は、LED用のエピタキシャルウエハは、超高輝度青色及び緑色の発光ダイオード(LED)及びレーザーダイオード(LD)アプリケーションのためのものであるベース。

  • 説明

製品の説明

The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

LED Epitaxial Wafer

アイテム Size Orientation Emission Wavelength Thickness   Substrate Surface Usable area
 PAM-50-LED-BLUE-F 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-BLUE-PSS 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-BLUE-F 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-PSS 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-150-LED-BLUE 150mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-SIL 50mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-100-LED-BLUE-SIL 100mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-150-LED-BLUE-SIL 150mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-200-LED-BLUE-SIL 200mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-50-LED-GREEN-F 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-GREEN-PSS 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-GREEN-F 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-GREEN-PSS 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-150-LED-GREEN 150mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-RED-GAAS-620 100mm 15°±0.5° red light 610-630nm / GaAs P/L >90%
PAM210527-LED-660 100mm 15°±0.5° red light 660nm / GaAs P/L >90%
 PAM-210414-850nm-LED 100mm 15°±0.5° IR 850nm / GaAs P/L >90%
 PAMP21138-940LED 100mm 15°±0.5° IR 940nm / GaAs P/L >90%
 PAM-50-LED-UV-365-PSS 50mm 0°±0.5° UVA 365 nm 425um+/-25um Sapphire
 PAM-50-LED-UV-405-PSS 50mm 0°±0.5° UVA 405 nm 425um+/-25um Sapphire
 PAM-50-LED-UVC-275-PSS 50mm 0°±0.5° UVC 275nm 425um+/-25um Sapphire
 PAM-50-LD-UV-405-SIL 50mm 0°±0.5° UV 405nm / Silicon P/L >90%
 PAM-50-LD-BLUE-450-SIL 50mm 0°±0.5° blue light 450nm / Silicon P/L >90%


As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

2. InGaN/GaN系(gallium nitride) based LED Epitaxial Wafer

Al2O3-2” 上のGaNエピウェハ仕様(LED用のエピタキシャルウエハ)

White: 445~460 nm
Blue:  465~475 nm
Green: 510~530 nm

1.成長技術 - MOCVD
2.Wafer直径:50.8ミリメートル
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Waferパターンサイズ:3X2X1.5μm

3. Wafer structure:

構造層 Thickness(μm)
p型GaN 0.2
p型AlGaN 0.03
InGaN / GaNの(アクティブ領域) 0.2
n型GaN 2.5
GaN系U- 3.5
Al 2 O 3(基板) 430

 

4. Wafer parameters to make chips:

em チップサイズ 特性 外観
PAM1023A01 ブルー 10ミルのx 23mil 照明
VF = 2.8〜3.4V LCDバックライト
ポー= 18〜25MW モバイル機器
WD = 450〜460nmで 民生電子
PAM454501 ブルー 45milのx 45mil VF = 2.8〜3.4V 一般照明
ポー= 250〜300mWの LCDバックライト
WD = 450〜460nmで 屋外ディスプレイ

 

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

点灯
LCDバックライト
モバイル機器
民生電子

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

GaAsのLEDウェハについて、それらはMOCVDによって成長されたGaAs LEDウェハの波長以下を参照してください。
赤:585nm、615nm、620〜630nmの
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

8. Definition of LED Epitaxial Wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.

 

ウェーハの仕様をLEDこれらの詳細のGaAsの場合は、以下を参照してください。LED用のGaAsエピウエハ

UV LEDウエハの仕様については、以下をご覧ください。UV LEDエピウエハ  

シリコン仕様のLEDウエハについて、ご覧ください。シリコン上のLEDウェハー

ブルーGaN系LDウエハーの仕様については、以下をご覧ください。 ブルーGaN系LDウエハー

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

GaN Wafers to Fabricate LED Devices

GaN LED Structure

GaN LED Structure Epitaxy on Flat or PSS Sapphire Substrate

LED用サファイア上でのGaNエピタキシャル成長

Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition

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