自立GaN基板

製品の説明

自立GaN基板

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our GaN基板 for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.

自立GaN基板の仕様

 ここでは詳細な仕様を示しています。

4″ N type Si doped GaN（Gallium Nitride) Free-standing Substrate

4″ N type Undoped GaN（Gallium Nitride) Free-standing Substrate

4″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

2″ Si doped GaN（Gallium Nitride) Free-standing Substrate

2″ Undoped GaN（Gallium Nitride) Free-standing Substrate

2″ Semi-Insulating GaN（Gallium Nitride) Free-standing Substrate

15ミリメートル、10ミリメートル、5ミリメートルフリースタンディングGaN系基板

注：

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

窒化ガリウム基板の応用

固体照明は：GaNデバイスは、超高輝度発光ダイオード（LED）、テレビ、自動車、一般照明として使用されます

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

ワイヤレス基地局：RFパワートランジスタ

ワイヤレスブロードバンドアクセス：高周波MMICの、RF-回路のMMICの

圧力センサー：MEMS

熱センサー：パイロ電気検出器

Powerコンディショニング：混合信号のGaN / Siの統合

カーエレクトロニクス：高温エレクトロニクス

送電線：高電圧エレクトロニクス

フレームセンサー：UV検出器

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

太陽電池材料を作成するための完璧な（InGaN系）の合金。 このため有利で、GaN基板上に成長させたInGaN太陽電池は、GaN基板ウェーハのための最も重要な新しいアプリケーションや成長市場の一つになろうとしています。

HEMT、FETのための理想