PAM厦門は、高品質のGaSb単結晶ウェハを提供しています。
1. Specifications of GaSb Single Crystal Wafers
GaSbのアンドープ
GaSbのウェハ(100)、ドープされていない、10x10x0.5 MM、1SP
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, undoped,P-type 2″x0.4 mm ,2sp
GaSb Wafer (111)-B, undoped,P-type 2″x0.4 mm ,2sp
GaSb Siをドープしました
GaSb(100)は、P型Siは、ドープされた2 "×0.450ミリメートルのウェハ、1SP
GaSb Teがドープしました
GaSb(100)、Nタイプ、Teがドープされた、2「Dのx0.45mmウエハ1SPキャリア濃度:3.5×10 ^ 17センチメートル^ -3
GaSb (100), N Type, Te doped, 2″D x0.45mm wafer 1sp,Carrier Concentration: (1-7)x10^17 cm^-3
GaSb (100), N Type, Te doped, 2″D x0.5mm wafer 1sp
GaSbのZnドープ
GaSb、(100)、Zn-ドープされ、P型、2 "DIA X 0.45ミリメートル、1SP
GaSb, (100), Zn- doped,, P-type, 2″ dia x 0.45mm, 1sp
2. FAQ of GaSb Wafer
Q1: Can we have a better Bow and Warp of GaSb wafer, <5um?
A: BOW and WARP of GaSb substrate should be <8um, 5um is too difficult.
Q2: what is the dislocation density in a regular manner and can we have EPD mapping of GaSb wafer ?
A: EPD of GaSb material is <1000, see below mapping:
Q3:Could you please offer us the following characterization data of GaSb substrate?
(TTV, Bow and Warp, Surface Oxide Thickness, FTIR Transmission, Mobility / Carrier Concentration / Resistivity mapping, EPD cartography, …)
A:Usually, all the data of GaSb should be tested after polished and before shipment, but we can show you some example data, like EPD, oxidized-warp-bow, oxidized-TTV-TIR, oxide layer thickness and so on. To obtain detailed information please contact victorchan@powerwaywafer.com.
詳細については、メールでお問い合わせください。victorchan@powerwaywafer.com と powerwaymaterial@gmail.com.