PAM XIAMEN offers 5x5mm & 10x10mm single crystal.

5x5mm & 10x10mm

Ge square substrates (100)

Ge (100) square substrate,N-type undoped

Ge Substrate (100) 5x 5×0.5 mm, 1 SP, Undoped ,N-type.R>50 ohm.cm
Ge Substrate (100) 5x 5×0.5 mm, 2SP, Undoped
Ge Substrate (100) 10x10x 0.35 mm, 1 SP, Undoped
Ge Substrate (100) 10x10x 0.5 mm, 1 SP, Undoped
Ge Substrate (100) 10x10x 0.5 mm, 2 SP, Undoped

Ge(100) square substrate ,N-type ,Sb-doped

Ge Substrate: (100) 10×10 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm
Ge Substrate: (100) 10×10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cm
Ge Substrate: (100) 10×10 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm
Ge Substrate: (100) 5×5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm
Ge Substrate: (100) 5×5 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm
Ge Substrate: (100) 5×5 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm

Ge(100) square substrate ,P-type ,Ga-doped

Ge Substrate: (100) 5×5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.002 ohm.cm
Ge Substrate: (100) 5×5 x 0.5 mm , 1SP, P type Ga doped,R:0.001-0.005 ohm.cm
Ge Substrate: (100) 5×5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm
Ge Substrate: (100) 10×5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm
Ge Substrate: (100) 10×10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.002ohm.cm-1
Ge Substrate: (100) 10×10 x 0.5 mm , 1SP, P type Ga doped,R:0.001-0.005 ohm.cm
Ge Substrate: (100) 10×10 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm
Ge Substrate: (100) 10×10 x 0.5 mm , 2SP, P type Ga doped,R:0.1-0.5 ohm.cm
Ge Substrate: (100) 10×10 x 0.5 mm , 2SP, P type Ga doped,R:1-5 ohm.cm-1
Ge Substrate: (100) 5×5 x 0.5 mm , 2SP, P type Ga doped,R:0.1-0.5 ohm.cm
Ge Substrate: (100)+/- 2 degree, 10×10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

Ge square substrates (110)

Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, Undoped
Ge Substrate (110) 5x5x 0.5 mm, 1 SP, Undoped
Ge Substrate (110)+/- 0.7 degree 5x5x0.5 mm, 1 SP,Sb-doped ,R:0.1-0.5 ohm.cm
Ge Substrate (110) 10x5x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm
Ge Substrate (110) 10x5x 0.5 mm, 1 SP, Undoped .
Ge Substrate (110) 10x5x 0.5 mm, 2 SP, Undoped
Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, Undoped”
Ge Substrate (110) 10x10x 0.5 mm, 1 SP, Sb-doped ,R:1-5 ohm.cm
Ge Substrate (110) 10x10x 0.5 mm, 1 SP, Undoped, R>50 ohm.cm
Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm

Ge square substrates (111)

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
Ge Substrate (111) 5x5x 0.5 mm, 1 SP, Undoped
Ge Substrate (111) 5x5x 0.5 mm, 2 SP, Undoped
Ge Substrate (111) 10x10x 0.45 mm, 2 SP, Undoped
Ge Substrate (111) 10x10x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
Ge Substrate (111) 10x10x 0.5 mm, 1 SP, Undoped .
Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped . 0.005-0.01 Ohm.cm
Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Undoped

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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