PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]
2019-03-13メタ著者
The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]
2021-06-17メタ著者
‘Optically pumped’ laser closer to improving processing speed of sensors
Researchers are developing a new material that could improve processing speed of sensors and other electronic components. Credit: University of Arkansas
Imagine creating a material for the digital information highway that allows a fast lane of [...]
2018-02-11メタ著者
PAM XIAMEN offers 200mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Below are just some of our recent 200mm silicon wafer sale specials.
8″ silicon wafer
Dia.: 200+/-0.5mm
Type: P
Ori.: <100>
Res.: 1000-3000 ohm.cm
Thk.: 705-745um
V-notch
Surface: Polished/Etched
MFG: MEMC
200mm Silicon from PAM XIAMEN
200mm N/Ph [...]
2019-02-20メタ著者
PAM XIAMEN offers Co Metallic Substrate.
Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished
Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished
Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished
Cr Metallic Substrate ( [...]
2019-05-08メタ著者
PAM-XIAMEN can offer epitaxy wafer of silicon for manufacturing integrated optical waveguide devices. The silicon epi wafer we offer is grown core layer of Si and lower cladding layer of SiO2 on Si substrate and the waveguide structure is ridged. Due to the large [...]
2022-09-05メタ著者
