SiO2層とLN膜の間には金属電極層（Au、Pt、Alなどの金属）が存在します。金属電極層と上部電極層との間のＬＮ膜上に電場を印加することができる。圧電効果、強誘電体ドメインスイッチング効果、熱電効果に基づいて、この薄膜は、高周波、高帯域幅RFフィルタ、低電力、高速強誘電体メモリ、高感度などの弾性表面波デバイス、メモリデバイスおよびセンサに応用されています。赤外線検出器。
単結晶ニオブ酸リチウム薄膜は、高速、広帯域、高密度、高効率の光回路や電子デバイスの開発にとって非常に重要です。
サイズ：3インチ
厚さ:300~700nm
方向:Z カット
構造は以下のとおりです。
ニオブ酸リチウム薄膜
電極
SiO2
ニオブ酸リチウム基板
Substrates for III-V nitride Film Deposition Crystal Structure M.P. Density Lattice Mis-match to GaN Thermal Expansion Growth Tech. .& Max size Standard substrate size (mm) oC g/cm3 (10-6/k) SiC (6H as example) Hexagonal ~2700 3.21 3.5 %...
4" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-100-N-SIC-350-A 4" 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4" 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4" 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * 3" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-76-N-SIC-350-A 3" 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3" 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * SEMI-INSULATING S4H-76-SI-SIC-350-A 3" 4H-SI 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3" 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3" 4H-SI 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% 2" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-51-N-SIC-330-A 2" 4H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2" 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2" 4H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * 2" 6H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S6H-51-N-SIC-330-A 2" 6H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2" 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2" 6H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2" 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2" 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2" 6H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2" 6H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2" 6H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2" 6H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * SEMI-INSULATING S6H-51-SI-SIC-330-A 2" 6H-SI 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2" 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2" 6H-SI 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2" 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2" 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2" 6H-SI 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2" 6H-SI 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon...
Glass Wafer, Including Bf33, Quartz, Ito Glass, Alkali free glass substrate In Stock, But Not Limited To The Following. ...
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP GaSb Wafer Substrate - Gallium Antimonide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 GaSb (100)±0.5 50.8 500±25 SSP N/A Te 1E17 - 5E18 N/A < 1000 1-100 GaSb (111)A±0.5 50.8 500±25 SSP N/A Te 1E17 - 5E18 N/A < 1000 1-100 GaSb (111)B 50.8 N/A N/A N/A Te (5-8)E17 N/A N/A 1-100 GaSb (111)B 50.8 N/A N/A N/A Undoped none N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A P/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/Te (1-8)E17/(2-7)E16 N/A <...
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