Single crystal AlN substrate can be provided with specifications as found in https://www.powerwaywafer.com/aln-substrate.html. AlN single crystal is the direct bandgap semiconductor material with the largest bandgap width (6.2 eV), which has excellent characteristics such as extremely high breakdown field strength, excellent thermal conductivity, stable physical and chemical properties. Moreover, AlN single [...]
PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field structure, and the parameters are [...]
PAM-XIAMEN is able to supply nitrogen (N) doped silicon wafers, specifications please refer to: https://www.powerwaywafer.com/silicon-wafer. The doping of nitrogen as an impurity into silicon crystals not only has a beneficial effect on the performance of silicon wafers, but also has an important impact on the physical and electrical properties of silicon [...]
PAM-XIAMEN can supply AlN single crystal substrate, additional specification please refer to https://www.powerwaywafer.com/aln-substrate.html. The main n-type AlN candidate dopants are oxygen (O) and silicon (Si), while for p-type AlN, they are magnesium (Mg) and beryllium (Be). So far, the success rate of Mg and O doping has been very low. [...]
PAM-XIAMEN is able to offer you high-performance silicon wafers, additional wafer information you can find in https://www.powerwaywafer.com/silicon-wafer. Heat treatment refers to the heat treatment of silicon single crystals (or silicon wafers) for a certain period of time at a certain temperature and protective atmosphere, with the aim of improving their [...]
PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, surface pits have an impact [...]
Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. The 4H-SiC substrate is the [...]
PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism and crystal defect distribution, and [...]
With the driving force of Automotive and Industrial electronics, the strong growth of the silicon carbide (SiC) power semiconductor market is expected to approach $10 billion in the coming years. At the same time, many industry participants have announced corresponding expansion plans to quickly seize market share. The cooperation and integration [...]
Aluminum nitride (AlN) is a widely used III-V group nitride with a hexagonal wurtzite structure in the field of acoustic electronic devices. It has a large direct bandgap (bandgap of 6.2 eV), is compatible with CMOS technology, and has high thermal conductivity. In addition, aluminum nitride thin films have [...]
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