When it comes to choosing a material as the basic material for transistors in computers, the key matter we need to consider is resistance. Conductors have very low resistance and can conduct electricity easily; insulators have high resistance and cannot conduct electricity. For transistors, [...]
2022-06-21メタ著者
Highlights
•Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
•The reason of effects of step width on the removal and the model are discussed.
•CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
•The variations of atomic [...]
2015-10-28メタ著者
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 2″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. More about the indium antimonide crystal substrate specifications, please see the following part:
1. Indium Antimonide [...]
Effects of sample processing on the performance of CdZnTe crystals
Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um.
6″ Si wafer
DSP
N-type
<111>
thickness 500±25um
resistivity40-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-07-01メタ著者
Abstract
The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
2017-06-14メタ著者
