我々は、カスタム薄膜(シリコンカーバイド)、炭化ケイ素デバイスの開発のため6H又は4H基板上のSiCエピタキシーを提供します。 SiCエピタキシャルウェハは、主にショットキーダイオード、金属酸化膜半導体電界効果トランジスタ、接合型電界効果のために使用されます
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  • 説明


SiC(Silicon Carbide) Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar

1.Specification of SiC epitaxy:

アイテム 仕様 標準値
ポリタイプ 4H
オフの方向に向けて 4度オフ
<11 2_ 0>
導電率 n型
ドーパント 窒素
キャリア濃度 5E15-2E18 cm-3
公差 ±25% ±15%
均一 2” (50.8ミリメートル)<10% 7%
3” (76.2ミリメートル)<20% 10%
4” (100ミリメートル)<20% 15%
厚さの範囲 5-15ミクロン
公差 ±10% ±5%
均一 2” <5% 2%
3” <7% 3%
4” <10% 5%
大きな点欠陥 2” <30 2” <15
3” <60 3” <30
4” <90 4” <45
エピ欠陥 ≤20 cm-2 ≤10 cm-2
ステップバンチング ≤2.0nmさ(Rq) ≤1.0nmさ(Rq)


2 mm edge exclusion for 50.8 and 76.2 mm, 3 mm edge exclusion for 100.0 mmNotes:

• Average of all measurement points for thickness and carrier concentration (see pg. 5)
• N-type epi layers <20 microns are preceeded by n-type, 1E18, 0.5 micron buffer layer
• Not all doping densities are available in all thicknesses
• Uniformity:standard deviation(σ)/average
• Any special requirement on the epi-parameter is on request

2.Test Methods

1番。 キャリア濃度ネットドーピングを水銀プローブCVを用いてのafer全体の平均値として決定されます。
第2号。 厚さ:厚さは、FTIRを用いてウエハ全体の平均値として決定されます。
No.4. Epi Defects Inspection or defect map performed under KLA-Tencor Candela CS20 Optical Surface Analyzer or SICA.
第5号。 ステップバンチング:ステップバンチングと粗さは10μMのx10μm領域にAFM(原子間力顕微鏡)によってscanedれます

2-1:Large Point Defects Descriptions

肉眼に明確な形状を示し、ある欠陥>全体50microns。 これらの機能は、スパイク、付着粒子、チップandcratersが含まれます。 大きい点欠陥3mm未満で離れつの欠陥としてカウント。

2-2:Epitaxy Defect Descriptions

D1。 3C含まれるもの
Regions where step-ow was interrupted during epi layer growth. Typicalregions are generally triangular although more rounded shapes are sometimesseen. Count once per occurrence. Two inclusions within 200 microns count asone

D2。 彗星の尾
Comet tails have a discrete head and trailing tail. These features are alignedparallel to the major at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as one.

D3。 人参
Similar to comet tails in appearance except they are more angular and lack adiscrete head. If present, these features are aligned parallel to the major at. Usually, any carrots present tend to be of the same length. Count once peroccurrence. Two carrots within 200 microns count as one.

D4。 粒子
Particles have the appearance of eyes and if present are usually concentratedat the wafer edges and not within the specied area. If present, count once peroccurrence. Two particles within 200 microns count as one..

D5。 シリコン液滴
Silicon droplets can appear as either small mounds or depressions in the wafersurface. Normally absent, but if present are largely concentrated at perimeterof wafer. If present, estimate the % of specied area affected.

D6。 没落
Adherent particles droped during Epi growth.

3. Application of SiC epitaxial wafer


Please see below detail application by field:

Field Radio Frequency(RF) Power Device LED 
Material SiLDMOS Si GaN/Al2O3
GaAs GaN/Si GaN/Si
GaN/Si Ga203 /
Device SiC based GaN HEMT SiC based MOSFET  
SiC based BJT
SiC based IGBT
SiC based SBD
Application Radar, 5G Electric vehicles Solid State Lighting


4. Mechanical wafers with Epi layes: are available, such as for process monitoring, which require wafers with low bow and warpage.

150mm 4H n-type SiC EPI wafers

Instrinsic SiC Epilayer on Silicon carbide substrate