PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Description
PAM2266
25.4mm
P
B
<111>
>1000
20000um
DSP
FZ
PAM2267
25.4mm
P
B
<100>
ANY
400um
SSP
Thickness is: 400+/-100um.
PAM2268
25.4mm
ANY
<100>
500um
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM2269
25.4mm
Undoped
Undoped
<111>
>2000
280um
SSP
Intrinsic FZ
PAM2270
25.4mm
Undoped
Undoped
<100>
>5000
73.5um
DSP
FZ, Float Zone
PAM2271
25.4mm
P
B
<100>
.01-.05
500um
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2271
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM2272
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-19meta-author
We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications.
1. 2″ LT-GaAs Wafer Specification:
Item
Specifications
Diamater(mm)
Ф 50.8mm ± 1mm
Thickness
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
Resistivity(300K)
>108 Ohm-cm
Carrier
<1ps
Dislocation Density
<1×106cm-2
Useable Surface Area
≥80%
Polishing
Single side polished
Substrate
GaAs substrate
Remark: Other conditions:
1) GaAs substrate should be undoped/semi-insulating with (100)orientation.
2) Growth temperature: ~ 200-250 C
2. [...]
PAM XIAMEN offers Ti: Sapphire Crystal
Ti: Sapphire Crystal
Ti Sapphire Crystal
Introduction
Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm.
This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers,
mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]
2019-07-24meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2434
p–type Si:B
[110] ±0.25°
4″
525
P/E
5–10
SEMI Prime, 2Flats, Empak cst
PAM2435
p–type Si:B
[110] ±0.5°
4″
380
P/P
1–30
SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
PAM2436
p–type Si:B
[110] ±0.5°
4″
750
P/E
1–100
SEMI Prime (back–side [...]
2019-02-19meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm)
FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm)
FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
2019-03-08meta-author
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]