我々は、カスタム薄膜(シリコンカーバイド)、炭化ケイ素デバイスの開発のため6H又は4H基板上のSiCエピタキシーを提供します。 SiCエピタキシャルウェハは、主にショットキーダイオード、金属酸化膜半導体電界効果トランジスタ、接合型電界効果のために使用されます
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  • 説明



PAM-XIAMEN provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for the fabrication of 600V~3300V power devices, including SBD, JBS, PIN, MOSFET, JFET, BJT, GTO, IGBT, etc. With a silicon carbide wafer as a substrate, a chemical vapor deposition (CVD) method is usually used to deposit a layer of single crystal on the wafer to form an epitaxial wafer. Among them, SiC epitaxy are prepared by growing silicon carbide epitaxial layers on conductive silicon carbide substrates, which can be further fabricated into power devices.


アイテム 仕様 標準値
ポリタイプ 4H
オフの方向に向けて 4度オフ
<11 2_ 0>
導電率 n型
ドーパント 窒素
キャリア濃度 5E15-2E18 cm-3
公差 ±25% ±15%
均一 2” (50.8ミリメートル)<10% 7%
3” (76.2ミリメートル)<20% 10%
4” (100ミリメートル)<20% 15%
厚さの範囲 5-15ミクロン
公差 ±10% ±5%
均一 2” <5% 2%
3” <7% 3%
4” <10% 5%
大きな点欠陥 2” <30 2” <15
3” <60 3” <30
4” <90 4” <45
エピ欠陥 ≤20cm-2 ≤10cm-2
ステップバンチング ≤2.0nmさ(Rq) ≤1.0nmさ(Rq)


50.8および76.2 mmの場合は2 mmのエッジ除外、100.0 mmの場合は3 mmのエッジ除外


2. Introduction of SiC Epitaxy

Why do We Need Silicon Carbide Epitaxial Wafer? Because different from the traditional silicon power device manufacturing process, silicon carbide power devices cannot be directly fabricated on silicon carbide single crystal materials. High-quality epitaxial materials must be grown on conductive single crystal substrates, and various devices manufactured on the SiC epitaxial wafer.

The main epitaxial technology for SiC epitaxy growth is chemical vapor deposition (CVD), which realizes a certain thickness and doped silicon carbide epitaxial material through the growth of SiC epitaxy reactor step flow. With the improvement of silicon carbide power device manufacturing requirements and withstand voltage levels, SiC epi wafer continues to develop in the direction of low defects and thick epitaxy.

In recent years, the quality of thin silicon carbide epitaxial materials (<20 μm) has been continuously improved. The microtubule defects in the epitaxial materials have been eliminated. However, the SiC epitaxy defects, such as drop, triangle, carrot, screw dislocation, basal plane dislocation, deep-level defects, etc., become the main factor affecting device performance. With the advancement of SiC epitaxy process, the thickness of the epitaxial layer has developed from a few μm and tens of μm in the past to the current tens of μm and hundreds of μm. Thanks to the advantages of SiC over Si, the SiC epitaxy market is growing rapidly.

Since silicon carbide devices must be fabricated on epitaxial materials, basically all silicon carbide single crystal materials will be used as SiC epitaxial film to grow epitaxial materials. The technology of silicon carbide epitaxial materials has developed rapidly internationally, with the highest epitaxial thickness reaching more than 250 μm. Among them, the epitaxy technology of 20 μm and below has a high maturity. The surface defect density has been reduced to less than 1/cm2, and the dislocation density has been reduced from 105/cm2 to 103/cm2. The dislocation conversion rate of base plane is close to 100%, which has basically met the requirements of epitaxial materials for large-scale production of silicon carbide devices.

In recent years, the international 30 μm~50 μm epitaxial material technology has also matured rapidly, but due to the limitation of SiC epi market demand, the progress of industrialization has been slow. At present, industrialization company can offer silicon carbide epitaxial materials in batches, include Cree SiC epitaxy, PAM-XIAMEN SiC epitaxy, Dow Corning SiC epitaxy etc..

3.Test Methods

No.1 キャリア濃度:純ドーピングは、HgプローブCVを使用して、表面全体の平均値として決定されます。
No.2 厚さ:厚さは、FTIRを使用してウェーハ全体の平均値として決定されます。
4番。 KLA-Tencor Candela CS20光学式表面分析装置またはSICAの下で実行されるエピ欠陥検査または欠陥マップ。
5番。 ステップバンチング:ステップバンチングと粗さは、AFM(原子間力顕微鏡)によって10μmx10μmの領域でスキャンされます

3-1:Large Point Defects Descriptions

補助のない目にはっきりとした形状を示し、幅が50ミクロンを超える欠陥。 これらの機能には、スパイク、付着粒子、チップ、クレーターが含まれます。 間隔が3 mm未満の大きな点欠陥は、1つの欠陥としてカウントされます。

3-2:Epitaxy Defect Descriptions

SiC epitaxy defects include 3C inclusions, comet tails, carrots, particles, silicon droplets and downfall.


4. Application of SiC epitaxial wafer



フィールド 無線周波数(RF) パワーデバイス LED
材料 SiLDMOS GaN/Al2O3
GaAsの GaN / Si GaN / Si
GaN / SiC SiC / SiC GaN / SiC
GaN / Si Ga203 /
デバイス SiCベースのGaN HEMT SiCベースのMOSFET
アプリケーション レーダー、5G 電気自動車 ソリッドステート照明


5. Mechanical wafers with Epi layes: are available, such as for process monitoring, which require wafers with low bow and warpage.

150ミリメートルの4H n型SiC EPIウエハ

Intrinsic SiC Epilayer on Silicon carbide substrate

Why do We Need Silicon Carbide Epitaxial Wafer?

4 Inch SiC Epi Wafer

4H SiC Epitaxial Wafers

SiC IGBT ウェーハ

SiC MOSFET構造 SiC基板上のホモエピタキシャル構造

Epitaxial Thin Film of Silicon Carbide (SiC) for Detectors