PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.25 °
1.5 ± 0.5 Ohmcm
150 ± 0.5 mm
280 ± 2.5 µm
30
1,25
30
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.5°
1-4 Ohmcm
150 [...]
2019-02-25meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp [...]
2019-07-03meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations
Published by:
Shakil Khan ; Ishaq Ahmad ; M. Hassan Raza ; Khizar-ul-Haq ; Ting-kai Zhao ; Fabian I. Ezema.
1.Department of Metallurgy and Materials EngineeringPakistan Institute [...]
2019-12-02meta-author
Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique
A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of [...]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]
2013-09-03meta-author
For non-cubic crystals, they are inherently anisotropic, that is, different directions have different properties. Take the silicon carbide crystal faces for example as below:
The space groups of 4H-SiC and 6H-SiC are P63mc, and the point group is 6mm. Both belong to the hexagonal system [...]
2021-04-07meta-author