PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-20メタ著者
Measurement of threading dislocation densities in GaN by wet chemical etching
We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid [...]
2013-05-16メタ著者
PAM XIAMEN offers Yb YAG Ytterbium (Yb) doped Yttrium Aluminium Garnet Laser Crystal.
Ytterbium – Yb:YAG is a very promising laser crystal and is more suitable for diode-pumping than the commonly used Nd-doped YAG crystals. Compared with the traditional Nd:YAG crystal, Yb:YAG crystal has a much wider [...]
2019-03-15メタ著者
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
In recent years, gallium nitride (GaN) is widely used in high-frequency, high-power microwave, millimeter wave devices, etc., because it has excellent performance of large band gap, high thermal conductivity, high electron saturation drift speed, and easy formation of heterostructures. At the same time, various fields have [...]
2021-04-29メタ著者
At present, most InAs/GaSb ll superlattices are grown on lattice matched GaSb substrates. However, due to the high price of GaSb substrate, the absence of semi-insulating substrate, and the complexity of the process, seeking to grow GaSb bulk materials on new substrates, such as [...]
2023-02-01メタ著者