PAM XIAMEN offers Pyrolytic Boron Nitride.
Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.
Good [...]
2019-05-14メタ著者
PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range
It can be grown on GaAs substrate, GaSb (111)A substrate and [...]
2020-05-15メタ著者
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 53-60Ωcm
TTV ≤10μm
RRG ≤ 7%
front and back sides acid etched
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = [...]
2019-08-22メタ著者
Highlights
•Nanoscale defects in III–V materials, grown over Si were characterized with CAFM.
•The defects exhibit higher conductivity.
•The contact rectifying feature is hide by a larger current under the reverse bias.
•Patterned samples fabricated using Aspect Ratio Trapping were also characterized.
Abstract
The implementation of high mobility devices requires [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Prime, TTV<1μm
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
SEMI Test, Wafers can be polished for additional fee
n-type Si:P
[111]
4″
1200
P/P
35-85
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
1500
P/E
>20 {24-29}
SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers
n-type Si:P
[111] ±0.5°
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
500
P/P
11-15
SEMI Prime, Both-sides Epi Ready polished
n-type Si:P
[111]
4″
280
P/E
1.3-2.7
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
280
P/E
1.3-2.7
SEMI Prime
n-type [...]
2019-03-05メタ著者
PAM XIAMEN offers Single crystal CdWO4.
CdWO4 is an excellent scintillating crystal for X-Ray detection. Its high light output enables to make a compact detector module by coupling efficiently with the spectral response of silicon photodiodes.
Structure
Lattice (A)
Melting Point oC
Density g/cm
Hardness (Mohn)
Thermo expansion
Refractive indexEmission wavelength (nm )
Emission wavelength [...]
2019-04-18メタ著者