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Article title:Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations
Published by:
1.Department of Metallurgy and Materials EngineeringPakistan Institute of Engineering and Applied SciencesIslamabadPakistan
2.Experimental Physics Laboratory, National Centre for PhysicsQuaid-i-Azam UniversityIslamabadPakistan
3.Department of Physics, Faculty of SciencesMirpur University of Science and TechnologyMirpurPakistan
4.NPU-NCP Joint International Research Center for Advanced Nanomaterials and Defects EngineeringNorthwestern Polytechnical UniversityXi’anChina
5.School of Materials Science & EngineeringNorthwestern Polytechnical UniversityXi’anChina
6.Department of Physics & AstronomyUniversity of NigeriaNsukkaNigeria
7.UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate StudiesUniversity of South AfricaPretoriaSouth Africa
Abstract
This paper deals with the 700 keV energetic Carbon (C) ions irradiations induced structrual modification and optical bandgap tunning of cubic (c) AlN thin films. MOCVD grown c-AlN thin film has been exposed to C ions at various ions fluences of 1 × 1013, 1 × 1014 and 1 × 1015 ions.cm−2. XRD patterns exhibited that films retain their cubic crystal structure after ions irradiations, indicating their structural stability against irradiation. Full width at half maximum of the XRD peaks remains almost same for pristine and irradiated films. Ions irradiations at fluence of 1 × 1014 ions/cm2, produces compressive stresses as observed from the shifts in (220) orientation peaks. However, its pristine position is restored with a further rise of ions fluence to 1 × 1015 ions/cm2, thereby relieving the induced stresses. Raman spectra also indicated that the stress produced at lower fluence are recovered with further increase of the fluence. The bandgap obtained from UV-visible optical transmission spectra also modulated with ions dose rate and is changed from 5.88 eV (for as grown) to 5.62 eV at maximum fluence.
Subject(s): AlN ; Ion irradiation ; XRD ; Raman spectroscopy .
Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited
“… 2 Experimental. AlN thin films grown on sapphire substrate by MOCVD method have been subjected to ions irradiations. The as grown film was purchased from Xiamen Powerway Advanced Material Co.,Ltd., China (http://www.qualitymaterial.net/AlN-Substrate.html) …”
Source:https://link.springer.com/article/10.1007/s11082-019-1934-5
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Now PAM-XIAMEN offer GaN material including GaN substrate, GaN on sapphire, InGaN, InN, and AlN epitaxial wafer with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities. As well as GaN based LED wafer and AlGaN/GaN HEMT wafer.
PAM-XIAMEN also offer SiC and GaAs/InP material from wafer substrate to epitaxial growth.
Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.
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