Tag - GaN-Based MOS Structures

Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were [...]