SchottkyおよびOhmic Drainコンタクトを使用した高電圧Algan/Gan-on-Si Hemtsの温度依存の電気的特性評価

ハイライト

•SchottkyおよびOhmic Drain電極を使用して、HV Algan/Gan-on-Si Hemtsを製造しました。
•We examine impact of temperature on the electrical parameters of fabricated devices.
•The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V.
•The SD-HEMTs are characterized by lower increase of Ron with increasing temperature.

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抽象
In this work we present results of electrical parameters characterization of high-voltage AlGaN/GaN high electron mobility transistors with ohmic and Schottky drain electrodes on silicon substrates. The use of Schottky-drain contacts improves breakdown voltage (VBR ), which was VBR = 900 V for LGD = 20 μm in contrast to VBR = 505 V for ohmic-drain contacts. Both types of transistors exhibit drain current density of 500 mA/mm and leakage current of 10 μA/mm. Temperature-dependent characterization reveals a drain current density decrease with increasing temperature. The Schottky-drain HEMTs are characterized by lower increase of the Ron (ΔRon = 250% at 200 °C) in comparison to ohmic drain contacts (ΔRon = 340% at 200 °C) relative to the room temperature due to decrease of on-set voltage of Schottky-drain HEMTs.

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キーワード

• Algan/Gan-on-Silicon;
• パワーデバイス;
• HEMT;
• Schottky Drain

出典:サイエンスダイレクト

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