ガラスウエハの透過率
ガラスウエハの透過率
ガラスウェーハの材質が異なると、透過率も異なります。エンドユーザーは詳細な用途を確認し、対応するガラスウェーハ材料を選択する必要があります。以下を参照してください。
Jgs1ガラスウェーハの透過率
Jgs2ガラスウェーハの透過率:
詳細については、メールでお問い合わせください。[email protected]と[email protected]
関連した 投稿
PAM-XIAMEN Offers AlGaAs layer on GaAs substrate
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaAs layer and other related products and services announced the new...
2021-08-22
3″ Silicon Wafer-6
PAM XIAMEN offers 3" Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [5,5,12] ±0.5° 3" 380 P/E 1-10 SEMI Prime p-type Si:B [211] ±0.5° 3" 525 P/P >10 SEMI Prime p-type Si:B [211] ±0.5° 3" 525 P/E >10 SEMI Prime p-type Si:B [111-28° towards[001]] ±0.5° 3" 400 P/E >20 SEMI TEST (Half of wafers...
2019-03-06
A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers
A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser The Ti oxide is used as insulator between the electrodes...
2019-03-24
LT-GaAsの
Gallium Oxide(Ga2O3) Wafer
PAM-XIAMEN can offer EFG grown Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received...
2021-04-19
SiC Heat Sink
Silicon carbide (SiC) devices can operate in high voltage, high switching frequency, and high power density environments due to the...
2024-09-18
Raman Study of Lattice Anharmonicity and Substrate Induced Effects in AlN Heteroepitaxial Layers
PAM-XIAMEN is able to produce AlN thin films for various research applications, more AlN epitaxy information please consult our sales...
2024-05-30