PAM-XIAMEN supplies 6 inch c-doped semi-insulating GaAs substrates, which are prime grade and mechanical grade grown by VGF. For wafer details, please view specifications listed below:
1. Prime Grade C-doped Semi-insulating GaAs
PAM220704-GaAs-Un
Parameter | GaAs-Un-6in-625um-PP | UOM |
Growth method | VGF | |
Grade | Prime grade (Epi-ready) | |
Dopant | C doped | |
Orientation | (100) ±0.5° | |
Orientation Angle | N/A | ° |
Diameter | 150.0±0.2 | mm |
Thickness | 625±25 or 675±25 | um |
Notch | [010] ± 2° | |
Notch Depth | 1.00-1.25 | mm |
Notch Angle | 89-95 | ° |
CC | N/A | /cm3 |
Resistivity@ 22°C | ≥1E8 | ohm·cm |
Mobility | ≥5000 | cm2/v·s |
EPD-AVE | ≤7000 | /cm2 |
TTV | ≤10 | um |
TIR | ≤10 | um |
Bow | ≤10 | um |
Warp | ≤10 | um |
Laser Marking | N/A | |
Front Surface | Polished, epi-ready | |
Back side Surface | Polished | |
Particle Count | ≥0.3um≤50/wafer | |
Packaging | Cassette(2 ingots in one cassette allowed) |
2. Mechanical GaAs Substrate, C doped
PAM220704-GaAs-Un
Parameter | GaAs-Un-6in-625um-PE(Mechanical) | UOM |
Growth method | VGF | |
Grade | Mechanical grade, Epi-ready | |
Dopant | C doped | |
Orientation | N/A | |
Orientation Angle | N/A | ° |
Diameter | 150.0±0.25 | mm |
Thickness | 600±25 or 625±25 | um |
Notch | [010] ± 2° | |
Notch Depth | 1.00-1.25 | mm |
Notch Angle | 89-95 | ° |
CC | N/A | /cm3 |
Resistivity@ 22°C | >1E17 | ohm·cm |
Mobility | >4000 | cm2/v·s |
EPD-AVE | N/A | /cm2 |
TTV | ≤15 | um |
TIR | N/A | um |
Bow | N/A | um |
Warp | N/A | um |
Laser Marking | N/A | |
Surface Finish | Single Side Polished | |
Particle Count | N/A | |
Packaging | Cassette(2 ingots in one cassette allowed) |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.