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GaN 웨이퍼, LED 소자 제작

GaN Wafers to Fabricate LED Devices PAM-XIAMEN offers GaN Wafers to Fabricate LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission: Specification of GaN Wafers for LED Devices PAM200614-GAN-LED size : 2 inch WD : 455 ± 10nm brightness : > 90mcd VF : [...]

직경 100.7 ± 0.3mm의 4 인치 FZ 실리콘 잉곳

PAM XIAMEN, 직경 100.7 ± 0.3mm Si 웨이퍼 오리엔테이션 (100) 4 "FZ 실리콘 잉곳 오리엔테이션 (100) Dia 6"x 두께 500µm 타입 n 또는 p 1-20 ohm.cm 단면 연마 자세한 내용은 sales @ powerwaywafer로 이메일을 보내주십시오 .com 및 powerwaymaterial@gmail.com

직경 76mm의 3 ″ FZ 실리콘 잉곳

PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

직경 50mm의 2 ″ FZ 실리콘 잉곳

PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm Silicon ingot, per SEMI, G Ø50mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

반 절연 GaAs 기판

Semi-insulating GaAs Substrate PAM190628-GAAS PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um. Specification of Semi-insulating GaAs Substrate Parameter Customer’sRequirements Guaranteed/Actual Values UOM GrowthMethod: VGF VGF — ConductType:. S-I-N S-I-N — Dopant: Undoped Undoped   Diameter: 100.0±0.2 100.0±0.2 mm Orientation: (100)±0.30offtoward (110) (100)±0.30offtoward (110) — OFlocation/length: EJ|0-1-1|±0.50/32.5±1.0 EJ[0-1-1]±0.50/32.5±1.0 — IFlocation/length: EJ|0-11|±0.50/18.0±1.0 EJ[0-11|±0.50/18.0±1.0 — Resistivity: Min:0.6E8 Min:0.8E8 Max:2.4E8 ohm.cm Mobility: Min:4500 Min:4769 Max:6571 cm2/v.s EPD: Max:10000 Min:700 Max:700 /cm2 Thickness: 600±25 600±25 pm Bow: Max:4 Max:4 μm Warp: Max:5 Max:5 μm TTV: Max:3 Max:3 μm TIR:. Max:3 Max:3 pm LFPD: Max:1 Max:1 pm LTV: Max:1.5 Max:1.5 μm PLTV: >90@15mm*15mm >90@15mm*15mm % ParticalCount: <100/wafer(for particle>0.28um); Haze<5ppm <I00/wafer(for particle>0.28um); Haze<5ppm — EdgeRounding: 0.375 0.375 mmR Laser Marking: Backside Backside — SurfaceFinish- front: Polished Polished — SurfaceFinish -back: Polished Polished — PL Mapping of Semi-insulating GaAs Substrate  Semi-insulating GaAs Substrate Semi-insulating GaAs Substrate             For more [...]

SSP가 포함 된 R- 평면 사파이어 기판

R-Plane Sapphire Substrate with SSP PAM-XIAMEN offers R-Plane Sapphire Substrate, single side polished,please see below spec: 2”,R-Plane Sapphire Substrate with SSP No Item Specification 1 Material High Purity Al2O3 2 Diameter 50.8土0.1mm 3 Thickness 430土15um 4 TTV ≤15um 5 Bow ≤10um 6 Warp ≤15um 7 Primary Flat Length 16.0土1.0mm 8 Front suface Roughmess(Ra) Ra≤0.3nm 9 Bock Surtace Roughness(Ra) 0.8~1.2um 10 Primary Flat Orienation A-plane+0.2o 11 Surtace onentation R-P1ane土02o 12 Laser Mark back side or front side or no laser mark 13 Package 25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom   3”,R-Plane Sapphire Substrate with SSP No ltem Specification 1 Material High Purity Al2O3 2 Diameter 76.2土0.2mm 3 Thickness 350土25um 4 Orientation R-plane0.0*土0.2* 5 Primary Flat [...]

C- 비행기 사파이어 기판

C-Plane Sapphire Substrate AM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec: 2” C-plane SSP Sapphire Substrate: No Item Specification 1 Material High PurityAl2O3 2 Diameter 50.8+0.1mm 3 Thickness 430土15um 4 TTV ≤10μm 5 LTV ≤1.5μm 6 Bow -10~0μm 7 Warp ≤10μm 8 Primary Flat Length 16.0土1.0mm 9 Front Surface Roughness(Ra)| Ra≤0.2nm   Back Surface Roughness(Ra) 0.7~1.2μm 11 Primary Flat Orientation A-plane土0.2° 12 Surface Orientation C-Plane(0001) off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis) 13 Laser Mark back side or frontside 14 Package 25pcs/Cassette, Vacuum-sealed, Nitrogen- filled, Class-100 Cleanroom Remark: C-plane 0/ 0.1/0.3/ 0.5 deg. [...]

SiC (실리콘 카바이드) Boule Crystal

SiC(Silicon Carbide) Boule Crystal PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size: No.1: 4″ SiC Boule Crystal, Production Grade Polytype: Production- 4H Diameter: Production-100,0 mm+/-0,2 mm Carrier type: Production-N-type Resistivity: [...]

빨간 적외선 AlGaAs / GaAs LED 에피 웨이퍼

Red Infrared AlGaAs /GaAs LED Epi-Wafer PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs /GaAs LED epi-wafer with wavelength 850-880 nm and 890-910nm: Structure of infrared AlGaAs /GaAs LED epi-wafer: PAM-190723-LED Structure Thickness, um Type Composition CC, cm-3 Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018 Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018 Active layer   – GaAs undoped   – Al0,2Ga0,8As Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017 Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018 (х=0,3-0,35) Stop layer 0.1 – AlхGa1-хAs – (х=0,9-1) Buffer layer – n GaAs – Substrate – n+ GaAs –   Where is the Red Infrared [...]

GaAs 기판의 InGaSb 필름

InGaSb Film on GaAs Substrate PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range It can be grown on GaAs substrate, GaSb (111)A substrate and GaSb(111)B [...]