Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
2020-03-09meta-author
InGaP / GaAs heterojunction bipolar transistor (HBT) has become one of the highly competitive and promising high-speed solid-state devices in the current microwave and millimeter wave field due to its high reliability, low cost, and relatively mature technology. PAM-XIAMEN provide InGaP / GaAs HBT wafers. [...]
2023-07-03meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-4
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
LED manufacturer Lextar Electronics claims to be the first LED maker in Taiwan to demonstrate blue-light emission from a processed 6-inch-diameter LED wafer.
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2012-05-21meta-author
PAM XIAMEN offers Gallium Arsenide substrate with various sizes and low density. The GaAs wafer with the conductivity of N type, P type, or semi-insulating is for sale. In addition, you can offer your own wafer design to customize.
1. Main Parameters of Gallium Arsenide Substrate
MAIN [...]
2019-03-11meta-author
Silicon wafer bonding technology refers to the method of tightly combining silicon wafers with silicon wafers, silicon wafers with glass or other materials through chemical and physical interactions. Silicon wafer bonding is often combined with surface silicon processing and bulk silicon processing, and is [...]
2023-07-26meta-author