PAM XIAMEN offers BARIUM FLUORIDE BAF2 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Barium fluoride, BaF2, crystal has good transmittance over a wide spectrum range, from 150 nm to 12.5 um. It has been widely used [...]
2019-03-11meta-author
PAM-XIAMEN can provide wafer polishing service for III-V compound wafers (such as InSb wafer, GaSb wafer, InAs wafer), ultra-thin semiconductor wafer, CZT wafer and other photoelectric materials. We aim to adopt a high-precision chemical polishing process to minimal surface damage. Take the InSb wafer [...]
2022-02-16meta-author
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal.
High quality MgO magnesium oxide crystals are used are used widely for various thin film applications. Customized MgO crystal substrates are available upon request.
1.Specification of MgO Magnesium Oxide Single Crystal
Main Parameters
Growth Method
Special Arc Melting
Crystal Structure
Cubic
Unit cell constant
a = [...]
2019-03-14meta-author
(LT-GaAs)Experimental Results
PAM XIAMEN offers Low Temperature GaAs.
Preparation for pump & probe measurement
Reflectance spectra measurement : we could not observe the reflectance peak.
PL spectra measurement : PL spectra were observed between 810 and 845 nm.
Pump & probe measurement (10 K)
・We have observed 0.6-1.6 picosecond decay [...]
2019-03-15meta-author
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author