FWHM and XRD report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
2018-08-14meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-111
.001-.005
300-350
P/E
PRIME
50.8
P
Boron
CZ
-110
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-110
1-20
250-300
P/E
PRIME
50.8
Any
Any
CZ
Any
Any
200-500
P/E
TEST
50.8
Any
Any
CZ
Any
Any
800-1000
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Intrinsic
Undoped
FZ
-100
5000-10000
275-325
P/E
PRIME
50.8
SI.
Undoped
VGF
-100
>1E7
325-375
P/E
PRIME
50.8
N
Si
VGF
4E+18
250-300
P/E
EPI
50.8
N
Si
VGF
-100
325-375
P/E
PRIME
50.8
P
Zn
VGF
-100
325-375
P/E
PRIME
50.8
Undoped
CZ
-100
>30
300-350
P/P
EPI
50.8
Undoped
CZ
-100
>30
350-400
P/E
EPI
50.8
N
Sb
CZ
(100)off 6-9 tow
.01-.04
150-200
P/E
EPI
50.8
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
50.8
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
50.8
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
50.8
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
50.8
R-Axis
CZ
300-350
P/E
TEST
50.8
N
Si
VGF
-100
275-325
P/E
PRIME
50.8
P
Zn
VGF
-100
275-325
P/E
PRIME
50.8
Si
Fe
VGF
-100
5000000
325-375
P/E
PRIME
50.8
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
50.8
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
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Gartner: worldwide semiconductor revenue declined 2.3% in 2015
Worldwide semiconductor revenue totaled 334.8 billion dollar in 2015, a 2.3 percent decline from 2014, according to final results by Gartner. The combined revenue of the top 25 semiconductor vendors fell by 0.5 percent during 2015. This was [...]
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PAM XIAMEN offers YAG Er Doped Yttrium Aluminium Garnet Laser Crystal.
PAM XIAMEN can supply a wide range of Er:YAG, Er doped Yttrium aluminium garnet single crystals and epi-ready crystal substrates to meet customer’s specific requirements.
Specifications:
Crystal structure: cubic
Lattice parameters: 12.01 Å
Orientations available: <111> or <100> crystalline within 5°
Melt [...]
2019-03-15meta-author
Terahertz (THz) wave generation technology is widely used in fields such as terahertz sensing, safety imaging, non-destructive material testing, and high-speed terahertz wireless data communication. Optical heterodyne is a method of achieving continuous tunable terahertz wave emission by mixing beat frequency signals of two [...]
2023-12-11meta-author
Thinking thin brings new layering and thermal abilities to the semiconductor industry
This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or [...]
2017-07-26meta-author