A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
2019-11-20meta-author
PAM XIAMEN offers 12 inch Si dummy wafer:
Surface:double side polished;
Thickness ≥750um;
V Notch(SEMI STD);
Slight scratch (with no stains or heavy/deep scratches);
About the Si dummy wafer
According to different application scenarios in the fab, silicon wafers can be divided into two categories:
1.Prime Wafer, which is directly used for [...]
2021-04-22meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
5000
P/E
3.4-3.7
SEMI Prime, Individual cst
n-type Si:P
[100]
2″
40 ±10
P/P
1-3
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers
n-type Si:P
[100]
2″
1000
P/P
1-10
SEMI Prime
n-type Si:Sb
[100]
2″
280
P/E
0.01-0.02
SEMI Prime
n-type Si:Sb
[100]
2″
1000
P/E
0.005-0.020
SEMI Prime
n-type Si:As
[100]
2″
300
P/P
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
500
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
7000
P/E
0.001-0.005
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual [...]
2019-03-07meta-author
We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more [...]
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
2019-05-17meta-author