PAM XIAMEN offers 2″ Silicon Wafer.
Diameter | Type | Dopant | Growth method |
Orientation | Resistivity | Thickness | Surface | Grade |
50.8 | P | Boron | CZ | -100 | 1-20 | 140-160 | P/P | PRIME |
50.8 | P | Boron | FZ | -100 | >1000 | 200-500 | P/P | PRIME |
50.8 | P | Boron | FZ | -100 | >3000 | 225-275 | P/P | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 225-275 | P/P | PRIME |
50.8 | P | Boron | CZ | -100 | .001-.005 | 250-300 | P/E | PRIME |
50.8 | P | Boron | CZ | -100 | .005-.02 | 250-300 | P/E | PRIME |
50.8 | P | Boron | FZ | -100 | >3000 | 250-300 | P/E | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 250-300 | P/E | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 250-300 | P/E/DTOx | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 250-300 | P/E/Ni | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 250-300 | P/E/OX | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 250-300 | P/E/WTOx | |
50.8 | P | Boron | CZ | -100 | .001-.005 | 275-325 | P/E | PRIME |
50.8 | P | Boron | CZ | -100 | 450-500 | P/P | PRIME | |
50.8 | P | Boron | FZ | -100 | 4000-10000 | 475-525 | P/P | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 500-550 | P/E | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 950-1000 | P/P | PRIME |
50.8 | P | Boron | CZ | -100 | 1-20 | 1000-1050 | P/E | PRIME |
50.8 | P | Boron | CZ | -111 | 1-20 | 225-275 | P/P | PRIME |
50.8 | P | Boron | CZ | -111 | 1-20 | 250-300 | P/E | PRIME |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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