PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:
1. Specifications of C-Plane Sapphire Substrate
2” C-plane SSP Sapphire Substrate:
No
Item
Specification
1
Material
High PurityAl2O3
2
Diameter
50.8+0.1mm
3
Thickness
430土15um
4
TTV
≤10μm
5
LTV
≤1.5μm
6
Bow
-10~0μm
7
Warp
≤10μm
8
Primary Flat Length
16.0土1.0mm
9
Front Surface Roughness(Ra)|
Ra≤0.2nm
Back Surface Roughness(Ra)
0.7~1.2μm
11
Primary Flat Orientation
A-plane土0.2°
12
Surface Orientation
C-Plane(0001)
off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis)
13
Laser Mark
back side or frontside
14
Package
25pcs/Cassette, Vacuum-sealed, Nitrogen-
[...]
2020-05-20meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100-6°]
4″
525
P/E
1-100
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.08-0.12
SEMI Prime, TTV<5μm
p-type Si:B
[100-4°] ±0.5°
4″
381
P/E
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
800
P/EP
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
3100
P/P
CZ 0.006-0.009
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
525
P/E
0.0042-0.0047
SEMI Prime
p-type Si:B
[100]
4″
150 ±15
P/P
0.001-0.005
SEMI Prime, TTV<2μm
p-type Si:B
[111-3°]
4″
300
P/E
3-4
SEMI Prime
p-type Si:B
[111-3°]
4″
400
P/E
0.015-0.018
SEMI Prime
p-type Si:B
[111]
4″
525
P/E
0.005-0.006
SEMI Prime
p-type Si:B
[111-1.5°]
4″
525
P/E
0.002-0.004
SEMI Prime
p-type Si:B
[111]
4″
300
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° [...]
2019-03-06meta-author
PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.
The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
2019-03-07meta-author
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
2013-03-29meta-author
Banknotes, documents, branded products, and sensitive goods like pharmaceuticals or technical components are often marked to distinguish them from imitations. However, some counterfeiters have learned to copy conventional fluorescent tags. In the journal Angewandte Chemie, Chinese scientists have now introduced a new, exceptional anti-counterfeit ink [...]
2017-10-30meta-author
Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another [...]