Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]
2019-12-16메타 저자
PAM XIAMEN offers TGG (Terbium Gallium Garnet).
TGG singlecrystal( Terbium Gallium Garne ) is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm.
TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
2019-05-20메타 저자
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Multisite microLED optrode array for neural interfacing
Published by:
Niall McAlinden; Yunzhou Cheng; Robert Scharf; Enyuan Xie; Erdan Gu; Christopher F. Reiche; [...]
2019-12-09메타 저자
PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily)
Technical specifications:
Melting point: 924°C (1,695 °F; 1,197 K)
Lattice constant: a = 6.46 Angstroms
Solubility in water: insoluble
Band gap: 0.25 eV (0 K)
0.32 eV (300 K)
Electron Mobility: 1600 cm2 V−1 s−1 (0 K)
6000 cm2 V−1 s−1 (300 K)
Crystal structure: Halite (cubic)
Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm.
Customization [...]
2019-03-14메타 저자
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
Breakdown field
~5 x 106 V cm-1
Mobility electrons
=< 1000 cm2 V-1 s-1
Mobility holes
=< 200 cm2 V-1 s-1
Diffusion coefficient [...]
Veeco MBE reactor for laser diodes
IPG Photonics adds 4th Veeco MBE reactor for laser diodes
Aug 29, 2012
The tool will be used to manufacture gallium arsenide based devices
Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation.
The system was delivered to [...]
2012-08-30메타 저자