3″ Silicon Wafer-2

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer.

Diameter Type Dopant Growth
method
Orientation Resistivity  Thickness Surface Grade
76.2 N Phos CZ -100 1-20 950-1050 P/E PRIME
76.2 N Phos CZ -100 1000-1050 P/E PRIME
76.2 N Phos CZ -100 1-20 1975-2025 P/E PRIME
76.2 N Phos CZ -100 1-20 2900-3100 P/E PRIME
76.2 N Phos CZ -100 1-50 2900-3100 P/E PRIME
76.2 N Phos CZ -100 1-20 5900-6100 P/E PRIME
76.2 N Phos CZ -100 10-60 9900-10100 P/E PRIME
76.2 N Phos CZ -111 300-350 P/P PRIME
76.2 N Phos CZ -111 350-400 P/E PRIME
76.2 N Phos CZ -111 1975-2025 P/P PRIME
76.2 N Phos CZ -111 1-20 2900-3100 P/E PRIME
76.2 N Phos CZ -111 1-20 4900-5100 P/E PRIME
76.2 N Phos CZ -111 1-20 5900-6100 P/E PRIME
76.2 N Phos CZ -111 1-20 11900-12100 P/E PRIME
76.2 N Phos CZ -110 300-350 P/P PRIME
76.2 N Phos CZ -110 350-400 P/E PRIME
76.2 P Boron CZ -100 1-20 43768 P/P PRIME
76.2 P Boron CZ -100 1-20 40-60 P/P PRIME
76.2 P Boron CZ -100 1-20 80-100 P/P PRIME
76.2 P Boron CZ -100 1-20 140-160 P/P PRIME
76.2 P Boron FZ -100 >3000 300-350 P/P PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

“Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.”

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