Through continuous efforts, PAM-XIAMEN has developed large-scale COP-free CZ silicon (Si) wafers, and effectively controlled the generation of COP in the ingot by improving the thermal field of crystal pulling, thereby achieving performance improvement and power consumption reduction. The 8-inch silicon wafer application process [...]
2022-06-06메타 저자
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(10-11)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20메타 저자
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05메타 저자
PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
p–type Si:B
[110] ±0.5°
390 ±10
C/C
>10
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
500
P/E
FZ >10,000
Prime, 2Flats, Empak cst, TTV<5μm
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
SEMI Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] [...]
2019-02-22메타 저자
PAM XIAMEN offers YIG Epi. Film on GGG.
YIG Film ( 3 microns) on GGG Substrate, (111), 10x10x0.5mm, single side coated
YIG Film ( 3 microns) on GGG Substrate, (111), 5x5x0.5mm, single side coated
YIG Film (4-5 um, ) on both sides of GGG [...]
2019-04-29메타 저자
PAM XIAMEN offers Single crystal CdWO4.
CdWO4 is an excellent scintillating crystal for X-Ray detection. Its high light output enables to make a compact detector module by coupling efficiently with the spectral response of silicon photodiodes.
Structure
Lattice (A)
Melting Point oC
Density g/cm
Hardness (Mohn)
Thermo expansion
Refractive indexEmission wavelength (nm )
Emission wavelength [...]
2019-04-18메타 저자