Indium Arsenide (InAs) wafer can be provided by PAM-XIAMEN with a diameter up to 2 inch and a wide choice in off or exact orientation, high or low concentration and surface processed to optoelectronics industry. InAs wafer is an important III-V narrow band gap [...]
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 6″ {150.0±0.3mm}Ø×625±15µm,
FZ Intrinsic undoped Si:-[100]±0.5°,
Ro > 20,000 Ohmcm,
Both-sides-polished, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy [...]
2020-07-17meta-author
PAM XIAMEN offers Single-emitter LD Chip 905nm @25W.
Brand: PAM-XIAMEN
Wavelength: 905nm
Stripe width: 84um
Output Power: 25W
Cavity Length:0.75mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
Single-emitter LD Chip 1470nm @3W
PAM200914-LD-CHIP-1470nm
Brand: PAM-XIAMEN
Wavelength: 1470nm
Stripe width: 96um
Output Power: 3W
Cavity Length:2mm
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2019-05-09meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-14
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author