4 인치 CZ 프라임 실리콘 웨이퍼 두께 200um

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4 인치 CZ 프라임 실리콘 웨이퍼 두께 200um

PAM XIAMEN은 4 ″ CZ 프라임 실리콘 웨이퍼 두께 200um을 제공합니다.

4 인치 Prime CZ-Si 웨이퍼 4 인치 (+/- 0.5mm), 두께 = 200 ± 25 µm,
오리엔테이션 (100) (+/- 0.5 °),
양면 광택,
p 또는 n 유형 (문제 없음),
? 옴 cm (문제 없음),
입자 : 0.33µm, <qty30
ttv ≤ 10um, 워프 ≤30um
두께가 10nm / 50nm 인 단면 스퍼터링 Cr / Au 레이어

자세한 내용은 다음 웹 사이트를 방문하십시오. https://www.powerwaywafer.com,
에서 우리에게 이메일을 보내 sales@powerwaywafer.com 과 powerwaymaterial@gmail.com

1990 년에 설립 된 Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN)는 중국의 반도체 소재 제조업체입니다.PAM-XIAMEN은 고급 결정 성장 및 에피 택시 기술, 제조 공정, 엔지니어링 기판 및 반도체 장치를 개발합니다.PAM-XIAMEN의 기술은 반도체 웨이퍼의 고성능 및 저비용 제조를 가능하게합니다.

1990 년 이전에 우리는 응축 물질 물리학 연구 센터를 소유하고 있습니다. 1990 년 센터는 Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN)를 설립하여 현재 중국에서 화합물 반도체 재료의 선두 제조업체입니다.

2019-06-28

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