We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]
2013-09-03meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 (STO) single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality [...]
2019-05-14meta-author
Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]
2019-12-16meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM XIAMEN offers high-quality Bi2Te3 single crystal.
Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for [...]
2019-04-17meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
1″
475 ±10
E/E
FZ >500 {1,900-2,400}
n-type Si:P
[111] ±0.5°
1″
280
P/P
FZ 2,000-10,000
TTV<5μm
Intrinsic Si:-
[100]
1″
320
P/E
FZ >20,000
Prime
Intrinsic Si:-
[100]
1″
500
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
1″
160
P/P
FZ >10,000
Prime, TTV<8μm
Intrinsic Si:-
[100]
0.5″
12700
C/C
FZ >10,000
a set of 4 rods sealed in polyehtylene foil
Intrinsic Si:-
[111] ±0.5°
1″
500
P/P
FZ >15,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
1″
1000
P/E
FZ 14,000-30,000
Cassettes of 7, 6, 6 wafers
Intrinsic Si:-
[111] ±2°
1″
27870
C/C
FZ >10,000
Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
p-type [...]
2019-03-08meta-author