PAM XIAMEN offers 2″ FZ Intrinsic Silicon Wafer
Silicon, 2″ Intrinsic
Orientation <100>,
Resistivity >10,000Ωcm,
Thickness 280±10um, DSP,
TTV<5um, Bow/Warp<30um,
2 SEMI Flats, Prime Grade,
Particle @0.3µm, <20 count
Good surface quality for Thermal Oxide growth
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
The Schottky barrier heights of Ti/Au contacts on p-type GaAs, grown on (111)A and (100) GaAs substrates by molecular beam epitaxy, have been investigated by I-V and C-V techniques. Higher barrier heights are observed for contacts on (111)A GaAs films. Comparison between our results [...]
2019-10-21meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors
A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
CZT Asymmetry Detector
1. CZT High Energy Resolution Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.0×5.0mm2
10.0×10.0mm2
Thickness
2.50mm
5.0mm
Electrode material
Au
Operation temperature
0℃-+40℃ (standard)/ -20℃-+40℃ (customized)
Operation voltage
≤900V
Energy range
10KeV~2.6MeV
Energy resolution(22℃)
<2.5%@662MeV
Peak-compton ratio
>3
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized [...]
2019-04-24meta-author
PAM XIAMEN offers 450mm Silicon Wafers.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
2019-02-20meta-author
Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]
2019-12-16meta-author