PAM XIAMEN offers 4″ Silicon Wafer.
| Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
| p-type Si:B | [100] | 4″ | 300 | P/P | 5-10 | SEMI Test, Scratched and unsealed. Can be re-polished for extra fee |
| p-type Si:B | [100] | 4″ | 380 | P/E | 5-10 | SEMI TEST (in Opened cassette), 2Flats |
| p-type Si:B | [100] | 4″ | 380 | P/E | 5-10 | SEMI Prime |
| p-type Si:B | [100] | 4″ | 380 | P/E | 5-10 | SEMI TEST (with bad surface) |
| p-type Si:B | [100] | 4″ | 380 | P/E | 5-10 | SEMI Prime, hard cst, Back-side slightly darker than normal |
| p-type Si:B | [100] | 4″ | 380 | P/E | 5-10 | SEMI Test, Dirty wafers, can be cleaned for extra fee |
| p-type Si:B | [100] | 4″ | 380 | BROKEN | 5-10 | Broken P/E Wafers, in Empak |
| p-type Si:B | [100] | 4″ | 380 | BROKEN | 5-10 | Broken P/E Wafers, in Empak |
| p-type Si:B | [100] | 4″ | 380 | BROKEN | 5-10 | Broken (largest piece is ~30%), in Empak |
| p-type Si:B | [100] | 4″ | 525 | P/E | 5-10 | SEMI Prime, TTV<5μm |
| p-type Si:B | [100] | 4″ | 525 | P/E | 5-10 | SEMI Prime, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 6 and 11 wafers |
| p-type Si:B | [100] | 4″ | 525 | P/E | 5-10 | SEMI Test, Dirty and scratched |
| p-type Si:B | [100] | 4″ | 525 | P/E | 5-10 | SEMI Prime |
| p-type Si:B | [100] | 4″ | 1000 | P/E | 5-10 | SEMI Prime, TTV<5μm |
| p-type Si:B | [100] | 4″ | 525 | P/E | 4.1-4.5 | Prime, NO Flats |
| p-type Si:B | [100] | 4″ | 250 | P/E | 1-10 | SEMI Prime |
| p-type Si:B | [100-4.0°] ±0.5° | 4″ | 275 | P/E | 1-30 | SEMI Prime, TTV<5μm |
| p-type Si:B | [100] | 4″ | 300 | P/P | 1-10 | SEMI Test, Surface Defects |
| p-type Si:B | [100-4° towards[110]] ±0.5° | 4″ | 300 | P/E | 1-10 | SEMI Test, Wafers with pits |
| p-type Si:B | [100] | 4″ | 381 ±5 | P/P | 1-30 | SEMI Prime, TTV<5μm, Bow<8μm, Warp<20μm |
| p-type Si:B | [100] | 4″ | 475 | P/E | 1-10 | SEMI Prime, Epi edges for 150μm epi growth |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.