X-ray diffraction analysis of LT-GaAs multilayer structures
Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity [...]
PAM XIAMEN offers 6″ FZ Silicon Ignot.
6″ Silicon Ingot
FY37b. 11.817Kg Silicon ingot, per SEMI,
G 150.7±0.3mmØ,
FZ Intrinsic undoped Si:-[100]±2.0°,
Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
Length: 286mm
For more information, please visit our website: [...]
2019-07-03메타 작성자
PAM XIAMEN offers 2 inch AlN on sapphire wafer grown by MOCVD, which is the major technology for growing single-crystal aluminum nitride onto large-size, low-cost, and mature sapphire substrate. One important utilization of high-quality AlN-on-sapphire template is the deep ultraviolet (DUV) optoelectronic devices.
1. Specification of [...]
2019-03-11메타 작성자
PAM XIAMEN offers Photographic Film Letterpress
Accuracy Index
Accuracy/Grade
Accuracy1
Accuracy2
Line Number/Aperture Rate
400dpi/50%
350dpi/50%
Dot arrangement, Dot shape
45°/60°/75°/circle
45°/60°/75°/circle
Dimensional Accuracy
±0.085mm
±0.085mm
Substrate Thickness
1.50mm±0.15mm
1.50mm±0.15mm
Cutting Accuracy
±1mm
±1mm
Main application areas:
LCD-TN/STN/TFT collocated liquid drum glue, namely transfer PI directional liquid to ITO glass. LCD-TN/STN/TFT Photographic Film Letterpress
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-04메타 작성자
MOMBE에서 성장한 탄소가 많이 도핑된 p형 GaAs를 사용하여 GaAs pn 다이오드를 제작했습니다. IV 및 CV 특성은 p-GaAs의 정공 농도에 큰 영향을 받지 않았지만 접합부에서의 격자 불일치로 인해 부정합 전위가 발생했습니다. 좋은 IV 특성은 [...]
2019-01-14메타 작성자
Highlights
•Elaboration of a smooth 3C–SiC membrane on a SiC substrate.
•Faceted surface for the (110) orientation but smoother for the (111) orientation.
•Roughness of the 3C–SiC membrane limited to 9 nm for the (111) orientation.
•New MEMS devices feasible.
•The huge SiC properties could be entirely exploited.
The cubic [...]