PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.
1. CZT Compton Imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
22.0×22.0 mm2
Thickness
15.0mm
Pixel size
1.38×1.38 mm2
Pixel center space
1.88mm
Pixel array
11×11
Electrode material
Au
Operation temperature
25℃-+40℃
Energy range
60KeV~2.6MeV
Energy resolution(22℃)
Average pixel <5%@662KeV
Storage temperture
10℃~40℃
Storage humidity
20%-80%
2. Spectrum of CZT Compton Imager
3. Features Compton Imaging Detector Based on CZT Crystal
Long-time stability
High energy [...]
2019-04-24meta-author
As an important part of new materials, semiconductor materials are the top priority of all countries in the world for the development of electronic information industry. It supports the development of localization of electronic information industry and is of great significance to industrial structure [...]
2019-04-02meta-author
PAM-XIAMEN offers lapped silicon carbide wafers, As-cut wafers are lapped and cleaned to be qualified as lapped wafers. What is wafer lapping? Wafer lapping is a global flattening process that improves wafer flatness by removing surface damage (usually from back grinding). It is most commonly found [...]
2018-08-07meta-author
PAM XIAMEN offers 150mm&200mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
150
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-550
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-600
P/E
TEST
150
N
Phos
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
N
Phos
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-550
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-600
P/E
TEST
150
P
Boron
CZ
-100
.001-.005
650-700
P/E
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
150
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
N
Si
VGF
-100
650-700
P/E
PRIME
150
P
Zn
VGF
-100
650-700
P/E
PRIME
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
150
Si
Undoped
VGF
-100
>1E7
650-700
P/E
PRIME
150
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Round
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Shipping Cassette
ePak
Holds25Wafers
Clean Room
200
N
Phos
CZ
-100
1-20
700-750
P/E/OX
PRIME
200
P
Boron
CZ
-100
1-100
600-800
P/E
TEST
200
P
Boron
CZ
-100
1-20
700-750
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-03-04meta-author
PAM XIAMEN offers Lithium Chip.
Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D
Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D.
SPECIFICATIONS:
Purity
99.9% Lithium
Melting Point
180.5 °C
Density
0.534 g/cm3
Color
Silver
Dimension
16 mm x 0.6 mm
(diameter x [...]
2019-05-07meta-author
PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]
2019-07-05meta-author