THz Generation Process in LT-GaAs
Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One [...]
2019-09-20meta-author
PAM XIAMEN offers LD Bare Bar for 808nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 808nm
Filling Factor: 38%
Output Power: 100W
Cavity Length:2mm
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send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (110)
BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains)
BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains)
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-17meta-author
InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW
A TEAM of Taiwanese engineers has used flip-chip packaging to build anInGaAs HEMT delivering up to 6.5 dB of gain at 60 GHz.
The researchers argue that one of the [...]
2012-09-10meta-author
PAM-XIAMEN participates in the design and processing of MEMS and compound semiconductor GaAs microwave integrated circuit (GaAs MMIC) devices, and focuses on the research, development, production and service of micro-nano sensors, micro-electromechanical systems (MEMS), micro-nano manufacturing and compound semiconductor GaAs chips. We are a [...]
2021-11-30meta-author