PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
p–type Si:B
[110] ±0.5°
390 ±10
C/C
>10
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
500
P/E
FZ >10,000
Prime, 2Flats, Empak cst, TTV<5μm
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
SEMI Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] [...]
2019-02-22meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
5 x 5 [...]
2019-05-15meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (001)
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains)
BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains)
BaTiO3 [...]
2019-04-17meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors
A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
280
P/E/P
1-20
SEMI Prime
p-type Si:B
[111-1.5°]
2″
400
P/E
1-10
SEMI Prime
p-type Si:B
[111]
2″
500
P/E
1-10
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
280
P/E
0.5-0.6
SEMI Prime
p-type Si:B
[111-3°]
2″
300
P/P
0.016-0.018
SEMI Prime
p-type Si:B
[111-3.5°]
2″
280
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[111]
2″
600
P/E
0.01-0.05
SEMI Prime
p-type Si:B
[111-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110]
2″
1000
P/P
~4
NO Flats
n-type Si:P
[110]
2″
950
P/P
2.5-3.5
1 F @ <1,-1,0>
n-type Si:P
[110]
2″
450
P/P
~0.6
1 F @ <001>
n-type Si:P
[110]
2″
1000
P/P
0.5-1.0
PF<111> SF 109.5°
n-type Si:P
[100]
2″
500
P/P
800-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
>50
SEMI Prime,
n-type Si:P
[100]
2″
5000
P/E
42-53
SEMI Prime, , Individual cst
n-type [...]
2019-03-07meta-author