60 + 1mm FZ 실리콘 잉곳 -2

60 + 1mm FZ 실리콘 잉곳 -2

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3″ 실리콘 EPI 웨이퍼-2

PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 4±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28.5 n- Si:P 20±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 30 n- Si:P 4.5±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 9.5±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 12±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 34 n- Si:P 11±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 36 n- Si:P 4±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 41 n- Si:P 25±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 42 n- Si:P 20.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 42.5 n- Si:P 17±10% n/n+ 3″Øx355μm n- Si:As[111] 0.001-0.005 P/E 52.5 n- Si:P 12.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 56 n- Si:P 12±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 70 n- Si:P 73±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 72 n- Si:P 12.5±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 73 n- Si:P 84±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 13±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 11±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 12±10% n/n+ 3″Øx375μm n- Si:As[111] 0.001-0.005 P/E 85 n- [...]

2019-03-08메타 저자
Sapphire Substrate Market in 2013

Sapphire Substrate Market in 2013   Will cell phone windows come to the rescue? Significant overcapacity and low LED substrate prices will affect the profitability and viability of many sapphire players in 2013 and beyond, but emerging applications could transform the industry. The sapphire material shortage experienced from [...]

2013-01-10메타 저자
단파 적외선 InGaAs 센서

Indium gallium arsenide (InGaAs) sensors are supplied by PAM-XIAMEN, a InGaAs sensor manufacturer. Its working principle is actually the principle of shortwave infrared (SWIR). And the working principle of SWIR-based sensor is similar to that of CMOS-based sensor, converting photons into electrons. SWIR technology [...]

2021-07-15메타 저자
LD Bare Bar for 808nm@cavity 1.5mm

PAM XIAMEN offers LD Bare Bar for 808nm@cavity 1.5mm. Brand: PAM-XIAMEN Wavelength: 808nm Filling Factor: 50% Output Power: 300W Cavity Length:1.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09메타 저자
Polishing Wafer

PAM-XIAMEN’ product line includes single-sided polishing (SSP) and double-sided polishing (DSP) wafer substrate or called mirror polished wafer for applications of semiconductors, MEMS, and other chips that require a strictly controlled flatness often require double-sided polishing chips. They are also necessary for a two-sided [...]

2018-08-07메타 저자
80+1mm FZ Si Ingot-5

PAM XIAMEN offers 80+1mm FZ Si Ingot-5 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-04-17메타 저자